Product Information

GRF5115

GRF5115 electronic component of Guerrilla RF

Datasheet
RF Amplifier .1-2.7GHz GaAs Gain 14.4dB

Manufacturer: Guerrilla RF
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.7497 ea
Line Total: USD 4.75

3967 - Global Stock
Ships to you between
Thu. 02 May to Mon. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13931 - Global Stock


Ships to you between Thu. 02 May to Mon. 06 May

MOQ : 1
Multiples : 1

Stock Image

GRF5115
Guerrilla RF

1 : USD 5.9455
10 : USD 5.6465
100 : USD 5.198
250 : USD 4.6115
500 : USD 4.1285
1000 : USD 2.53
1500 : USD 2.2885
4500 : USD 2.1735

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Operating Supply Current
Packaging
Series
Test Frequency
Brand
Number Of Channels
Development Kit
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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GRF5115 Released 33.0 dBm Power-LNA Tuning Range: 0.1 2.7 GHz Product Description GRF5115 is a high efficiency PA/Driver that delivers an OP1dB of 33 dBm with greater than 55% drain efficien- cy. It is tunable from 100 MHz up to 2.7 GHz with typi- cal fractional bandwidths of 5 to 10% The device can be biased with Vdd over a range from 2.7 to 5.0 volts and Iddq can be adjusted for optimal Features linearity and efficiency. Consult with the GRF applications engineering team for Reference: 5V/300mA/1.95GHz custom tuning/evaluation board data and device s- Gain: 14.8 dB parameters. OP1dB: 33.2 dBm Drain Efficiency: 58% OIP3: 43.0 dBm Eval Board NF: 1.3 dB Flexible Bias Voltage and Current Process: GaAs pHEMT Applications High Efficiency Power Amplifier Multi-stage LNA Linear Driver 3.0 x 3.0 mm QFN-16 TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 03/04/21 1 GRF5115 Released 33.0 dBm Power-LNA Tuning Range: 0.1 2.7 GHz Absolute Ratings: Parameter Symbol Min. Max. Unit Drain Voltage VDD 5.5 V Transient Average RF Input Power: (Load VSWR < 2:1 Du- P 23.0 dBm IN MAX ration: <1 hour) Operating Temperature (Package Heat Sink) TAMB -40 85 C Maximum Channel Temperature (MTTF > 10 6 Hours) TMAX 170 C Maximum Dissipated Power PDISS MAX 2.0 W Electrostatic Discharge: Charged Device Model: (TBD) CDM 1500 V Human Body Model: (TBD) HBM 250 V Storage: Storage Temperature TSTG -65 150 C Moisture Sensitivity Level MSL 1 -- Caution ESD Sensitive Device Exceeding Absolute Maximum Rating conditions may cause permanent damage to the device. Note: For manufacturing information, see the Guerrilla -RF.com website for the following docu- ment located on the GRF5115 landing page: Manufacturing NoteMN-001 Product Tape and Reel, Solderability and Package Outline Specicatifi on. Link to manufacturing note TM TM Guerrilla RF Proprietary Information. Guerrilla RF and the composite logo of Guerrilla RF are trademarks of Guerrilla RF, Inc. 2014 Guerrilla RF, Inc. All rights reserved. Please contact Guerrilla RF at (+1) 336-510-7840 or sales guerrilla-rf.com Revision Date: 03/04/21 2

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:

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