Product Information

2SB07740RA

2SB07740RA electronic component of Panasonic

Datasheet
TRANS PNP 25V 0.1A TO-92
Manufacturer: Panasonic
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1855 ea
Line Total: USD 556.5

0 - Global Stock
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

2SB07740RA
Panasonic

3000 : USD 0.1855

0 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

2SB07740RA
Panasonic

1 : USD 0.7461
10 : USD 0.4759
100 : USD 0.3414
500 : USD 0.2865
1000 : USD 0.2691

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
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Additional Infomation About Product

This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0774 (2SB774) Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 5.00.2 4.00.2 Features High emitter-base voltage (Collector open) V EBO Protective diodes and resistances between emitter and base can be omitted. 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.15 +0.15 0.45 0.45 0.1 0.1 Collector-base voltage (Emitter open) V 30 V CBO +0.6 +0.6 2.5 2.5 0.2 0.2 Collector-emitter voltage (Base open) V 25 V CEO 1: Emitter 123 Emitter-base voltage (Collector open) V 15 V EBO 2: Collector Collector current I 100 mA C 3: Base EIAJ: SC-43A Peak collector current I 200 mA CP TO-92-B1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 15 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 100 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE1 CE C h V = 2 V, I = 100 mA 90 FE2 CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common-emitter reverse transfer) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 210 to 340 290 to 460 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00053BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0774 P T I V I V C a C CE C BE 500 200 240 T = 25C a V = 10 V I = 1.8 mA CE B 1.6 mA 200 1.4 mA 400 160 1.2 mA 160 1.0 mA 300 120 0.8 mA 25C 0.6 mA 120 T = 75C 25C a 200 80 0.4 mA 80 0.2 mA 100 40 40 0 0 0 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature T (C) Base-emitter voltage V (V) Collector-emitter voltage V (V) a BE CE V I h I f I CE(sat) C FE C T E 600 100 1000 I / I = 10 C B V = 10 V V = 10 V CE CB T = 25C a 500 10 400 T = 75C a 25C 300 1 100 25C 200 T = 75C a 0.1 25C 100 25C 0 10 0.01 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Emitter current I (mA) Collector current I (mA) C E C C V ob CB 12 I = 0 E f = 1 MHz T = 25C a 10 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00053BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Panasonic may also be referenced as

Aromat
PA4
PAB
PAN
Panasonic - BSG
Panasonic - ECG
Panasonic - SSG
PANASONIC / SUNX
PANASONIC ACCESSORIES
PANASONIC BATTERIES
PANASONIC BATTERY
Panasonic Electric W
Panasonic Electric Works
Panasonic Electronic Components
Panasonic Electronic Components - Semiconductor Products
PANASONIC EW / AROMAT
PANASONIC EW/AROMAT
PANASONIC IMD
PANASONIC IND DEVICES (PIDSA)
Panasonic Industrial Automation Sales
Panasonic Industrial Devices
PANASONIC PIDSMY
Panasonic Semiconductors
PB4

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