This product complies with the RoHS Directive (EU 2002/95/EC). Power Transistors 2SB0942 (2SB942), 2SB0942A (2SB942A) Silicon PNP epitaxial planar type For low-frequency power amplification Unit: mm Complementary to 2SD1267, 2SD1267A 10.00.2 4.20.2 Features 5.50.2 2.70.2 High forward current transfer ratio h which has satisfactory linearity FE Large collector-emitter saturation voltage V CE(sat) 3.10.1 Full-pack package which can be installed to the heat sink with one screw Absolute Maximum Ratings T = 25C C 1.30.2 Parameter Symbol Rating Unit 1.40.1 2SB0942 V 60 V Collector-base voltage +0.2 CBO 0.5 0.1 0.80.1 (Emitter open) 2SB0942A 80 2SB0942 V 60 V Collector-emitter voltage CEO 2.540.3 (Base open) 2SB0942A 80 5.080.5 1: Base Emitter-base voltage (Collector open) V 5V EBO 2: Collector 132 3: Emitter Collector current I 4A C EIAJ: SC-67 Peak collector current I 8A CP TO-220F-A1 Package Collector power P 40 W C dissipation T = 25C2 a Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C C Parameter Symbol Conditions Min Typ Max Unit 2SB0942 V I = 30 mA, I = 0 60 V Collector-emitter voltage CEO C B (Base open) 2SB0942A 80 Base-emitter voltage V V = 4 V, I = 3 A 2V BE CE C 2SB0942 I V = 60 V, V = 0 400 A Collector-emitter CES CE BE cutoff current (E-B short) 2SB0942A V = 80 V, V = 0 400 CE BE Collector-emitter cutoff current (Base open) I V = 30 V, I = 0 700 A CEO CE B Emitter-base cutoff current (Collector open) I V = 5 V, I = 0 1mA EBO EB C * Forward current transfer ratio h V = 4 V, I = 1 A 40 250 FE1 CE C h V = 4 V, I = 3 A 15 FE2 CE C Collector-emitter saturation voltage V I = 4 A, I = 0.4 A 1.5 V CE(sat) C B Transition frequency f V = 10 V, I = 0.1 A, f = 10 MHz 30 MHz T CE C Turn-on time t I = 4 A, I = 0.4 A, I = 0.4 A 0.2 s on C B1 B2 Storage time t V = 50 V 0.5 s stg CC Fall time t 0.2 s f Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R Q P h 40 to 90 70 to 150 120 to 250 FE1 Note) The part numbers in the parenthesis show conventional part number. Publication date: February 2003 SJD00022BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0942, 2SB0942A P T I V I V C a C CE C BE 50 6 10 T =25C (1)TC=Ta I =120mA C B VCE=4V (2)With a 1001002mm Al heat sink 100mA 5 40 (3)With a 50502mm 8 Al heat sink 80mA (4)Without heat sink (PC=2W) 4 60mA 25C 30 6 TC=100C 25C 3 40mA (1) 20 4 20mA 2 10mA 10 2 (2) 8mA 1 (3) 5mA (4) 0 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0 0.4 0.8 1.2 1.6 2.0 Ambient temperature T (C) Collector-emitter voltage V (V) Base-emitter voltage V (V) a CE BE V I h I f I CE(sat) C FE C T C 4 4 10 10 100 VCE=4V IC/IB=10 V =5V CE f=10MHz TC=25C 3 3 10 10 10 25C T =100C C 2 2 10 10 1 25C 25C TC=100C 10 10 0.1 25C 1 1 0.01 0.01 0.1 1 10 0.01 0.1 1 10 0.01 0.1 1 10 Collector current I (A) Collector current I (A) Collector current I (A) C C C Safe operation area R t th 3 10 100 Non repetitive pulse (1)Without heat sink TC=25C (2)With a 1001002mm Al heat sink 2 10 (1) 10 ICP t=1ms (2) I C 10 t=10ms 1 DC 1 0.1 1 10 2 0.01 10 4 3 2 1 2 3 4 1 10 100 1 000 10 10 10 10 1 10 10 10 10 Time t (s) Collector-emitter voltage V (V) CE 2 SJD00022BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.