Product Information

Q62702P0129

Q62702P0129 electronic component of OSRAM

Datasheet
Photodiode PIN Chip 850nm 0.62A/W Sensitivity 2-Pin T-1 3/4 T/R
Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

57: USD 1.0791 ea
Line Total: USD 61.51

0 - Global Stock
MOQ: 57  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 57
Multiples : 1
57 : USD 1.0791
100 : USD 0.9911

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Additional Infomation About Product

2014-01-10 Silicon PIN Photodiode Silizium-PIN-Fotodiode Version 1.1 SFH 206 K Features: Besondere Merkmale: Especially suitable for applications from 400 nm to Speziell geeignet fr Anwendungen im Bereich von 1100 nm 400 nm bis 1100 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) 5 mm LED plastic package 5-mm-Plastikbauform im LED-Gehuse Also available on tape and reel Auch gegurtet lieferbar Applications Anwendungen Photointerrupters Lichtschranken Industrial electronics Industrieelektronik For control and drive circuits Messen / Steuern / Regeln Computer-controlled flashes Computer-Blitzlichtgerte Ordering Information Bestellinformation Type: Ordering Code Typ: Bestellnummer SFH 206 K Q62702P0129 2014-01-10 1Version 1.1 SFH 206 K Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 32 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Spectral sensitivity S80 ( 50) nA/Ix Fotoempfindlichkeit (V = 5 V, standard light A, T = 2856 K) R Wavelength of max. sensitivity 850 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 400 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A7.02 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.65 x 2.65 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.62 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 850 nm) Quantum yield of the chip 0.90 Electro Quantenausbeute des Chips ns ( = 850 nm) /Photon 2014-01-10 2

HS Compliance

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:

OSRAM may also be referenced as

AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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