Product Information

Q62702P0084

Q62702P0084 electronic component of OSRAM

Datasheet
Photodiode PIN Chip 950nm 0.7A/W Sensitivity 2-Pin PDIL

Manufacturer: OSRAM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

97: USD 0.6299 ea
Line Total: USD 61.1

0 - Global Stock
MOQ: 97  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 97
Multiples : 1
97 : USD 0.6299
100 : USD 0.5785

     
Manufacturer
Product Category
Maximum Dark Current
Peak Wavelength
Rise Time
Fall Time
Deleted
Power Dissipation
Pin Count
Reverse Breakdown Voltage
Forward Voltage
Mounting
Operating Temperature Classification
Operating Temp Range
Rad Hardened
Package Type
Type
Polarity
Light Current
Photodiode Type
Responsivity
Photodiode Material
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2014-01-17 Silicon PIN Photodiode with Daylight Blocking Filter Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Version 1.1 BP 104 F Features: Besondere Merkmale: Especially suitable for applications of 950 nm Speziell geeignet fr Anwendungen bei 950 nm Short switching time (typ. 20 ns) Kurze Schaltzeit (typ. 20 ns) DIL plastic package with high packing density DIL-Plastikbauform mit hoher Packungsdichte Applications Anwendungen Photointerrupters Lichtschranken Remote control Fernsteuerung Ordering Information Bestellinformation Type: Photocurrent Ordering Code Typ: Fotostrom Bestellnummer 2 = 950 nm, E = 1 mW/cm , V = 5 V e R I A P BP 104 F 34 ( 25) Q62702P0084 Maximum Ratings (T = 25 C) A Grenzwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Operating and storage temperature range T T -40 ... 100 C op stg Betriebs- und Lagertemperatur Reverse voltage V 20 V R Sperrspannung Total power dissipation P 150 mW tot Verlustleistung 2014-01-17 1Version 1.1 BP 104 F Characteristics (T = 25 C) A Kennwerte Parameter Symbol Values Unit Bezeichnung Symbol Werte Einheit Photocurrent I 34 ( 25) A P Fotostrom 2 (V = 5 V, E = 1 mW/cm , = 950 nm) R e Wavelength of max. sensitivity 950 nm S max Wellenlnge der max. Fotoempfindlichkeit Spectral range of sensitivity 800 ... 1100 nm 10% Spektraler Bereich der Fotoempfindlichkeit 2 Radiant sensitive area A4.84 mm Bestrahlungsempfindliche Flche Dimensions of radiant sensitive area L x W 2.2 x 2.2 mm x Abmessung der bestrahlungsempfindlichen mm Flche Half angle 60 Halbwinkel Dark current I 2 ( 30) nA R Dunkelstrom (V = 10 V) R Spectral sensitivity of the chip S 0.7 A / W typ Spektrale Fotoempfindlichkeit des Chips ( = 950 nm) Quantum yield of the chip 0.91 Electro Quantenausbeute des Chips ns ( = 950 nm) /Photon Open-circuit voltage V 330 ( 250) mV O Leerlaufspannung 2 (E = 0.5 mW/cm , = 950 nm) e Short-circuit current I 17 A SC Kurzschlussstrom 2 (E = 0.5 mW/cm , = 950 nm) e Rise and fall time t , t 0.02 s r f Anstiegs- und Abfallzeit (R = 50 V = 5 V = 850 nm I = 800 A) L R p Forward voltage V 1.3 V F Durchlassspannung (I = 100 mA, E = 0) F 2014-01-17 2

Tariff Desc

8541.40.00 54 No .Light emitting diodes (LED), LED displays, optocouplers, photosensitive transistors and diodes, infra-red and fibre optic emitters and detectors Free

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS; LIGHT-EMITTING DIODES (LED); MOUNTED PIEZO-ELECTRIC CRYSTALS:
AMS OSRAM
OS4
OSRAM DS
OSRAM OPTO SEMI
OSRAM Opto Semicon
OSRAM Opto Semiconductors
OSRAM Opto Semiconductors Inc
OSRAM Opto Semiconductors Inc.
OSRAM Sylvania

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