ESD7272 ESD Protection Diodes, Low Capacitance, Dual Channel The ESD7272 is designed to protect various IOs and data lines from ESD. The low capacitance and low ESD clamping voltage combined with a high standoff voltage makes this device an ideal solution for www.onsemi.com protecting various types of ICs without causing signal degradation. The small, cost efficient SOT23 package allows for easy PCB layout and BOM reduction on multiple pin modules. MARKING DIAGRAM Features Low Capacitance: < 3.0 pF SOT23 27L M Protection for the Following IEC & ISO Standards: CASE 318 IEC 6100042 (Level 4) 1 ISO 10605 Low ESD Clamping Voltage 27L = Specific Device Code SZ Prefix for Automotive and Other Applications Requiring Unique M = Date Code = PbFree Package Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree, Halogen Free/BFR Free and are RoHS PIN CONFIGURATIONS Compliant AND SCHEMATICS Pin 1 Pin 2 Typical Applications Sensor Lines PWM Inputs/Outputs General I/Os Automotive MAXIMUM RATINGS (T = 25C unless otherwise noted) A Rating Symbol Value Unit Pin 3 IEC 6100042 Contact ESD 15 kV IEC 6100042 Air 15 ISO 10605 330 pF / 330 Contact 12 ISO 10605 330 pF / 2 k Contact 25 30 ISO 10605 150 pF / 2 k Contact = Operating Junction Temperature Range T 55 to +175 C J(max) Storage Temperature Range T 55 to +175 C stg Lead Solder Temperature Maximum T 260 C L (10 Second Duration) Stresses exceeding those listed in the Maximum Ratings table may damage the ORDERING INFORMATION device. If any of these limits are exceeded, device functionality should not be See detailed ordering, marking and shipping information on assumed, damage may occur and reliability may be affected. page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: April, 2019 Rev. 0 ESD7272/DESD7272 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Parameter Symbol Condition Min Typ Max Unit Reverse Working Voltage V Any I/O to GND 24 V RWM Breakdown Voltage V I = 1 mA, Any I/O to GND 27 29 36 V BR T Forward Voltage V I = 100 mA, GND to Any I/O 2.0 6.0 V F T Reverse Leakage Current I V = 24 V, Any I/O to GND 0.2 1000 nA R RWM Clamping Voltage V I = 1 A, Any I/O to GND (8/20 s pulse) 38 40 V C PP Clamping Voltage (Note 1) V IEC6100042, 8kV Contact See Figures 3 & 4 C Clamping Voltage TLP V I = 8 A 38 V C PP (Note 2) I = 16 A 41 V PP I = 8 A 8.0 V PP I = 16 A 10.5 V PP Junction Capacitance C V = 0 V, f = 1 MHz between Any I/O and GND 1.3 2.0 pF J R Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 1. For text procedures see Application Note AND8307/D. 2. ANSI/ESD STM5.5.1 Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model. TLP conditions: Z = 50 , t = 100 ns, t = 4 ns, averaging window t = 30 ns to t = 60 ns. 0 p r 1 2 1.E02 1.6 1.E03 1.4 1.E04 1.2 1.E05 1.0 1.E06 1.E07 IOGND 0.8 1.E08 0.6 1.E09 0.4 1.E10 0.2 1.E11 0 1.E12 6322 6 10 14 18 22 26 304 0 510 15 20 25 V (V) V (V) Bias Figure 1. IV Characteristics Figure 2. CV Characteristics 160 10 150 0 140 10 130 20 120 30 110 40 100 50 90 60 80 70 70 80 60 90 50 100 40 110 30 120 20 130 10 140 0 150 10 160 20 020 40 60 80 100 120 140 20 020 40 60 80 100 120 140 TIME (ns) TIME (ns) Figure 3. IEC6100024 +8 kV Contact Figure 4. IEC6100024 8 kV Contact Clamping Voltage Clamping Voltage www.onsemi.com 2 VOLTAGE (V) I (A) VOLTAGE (V) C (pF)