Product Information

V9MLN41206WH

V9MLN41206WH electronic component of Littelfuse

Datasheet
ESD Suppressors TVS Diodes 450pF

Manufacturer: Littelfuse
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.4752 ea
Line Total: USD 1188

0 - Global Stock
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 2500
Multiples : 2500

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V9MLN41206WH
Littelfuse

2500 : USD 0.5658

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 2500
Multiples : 2500

Stock Image

V9MLN41206WH
Littelfuse

2500 : USD 0.4699
5000 : USD 0.4699
10000 : USD 0.4699

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Termination Style
Clamping Voltage
Package / Case
Packaging
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Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series TM RoHS MLN SurgeArray Suppressor Description The MLN SurgeArray Suppressor is designed to help protect components from transient voltages that exist at the circuit board level. This device provides four independent suppressors in a single leadless chip in order to reduce part count and placement time as well as save space on printed circuit boards. SurgeArray Suppressor are intended to suppress ESD, EFT and other transients in order to protect integrated circuits or other sensitive components operating at any voltage up to 18V . SurgeArray Suppressor are rated DC to the IEC 61000-4-2 human body model ESD to help products attain EMC compliance. The array offers excellent Size Table isolation and low crosstalk between sections. Metric EIA The inherent capacitance of the SurgeArray Suppressor 3216 1206 permits it to function as a filter/suppressor, thereby replacing separate Zener/capacitor combinations. Absolute Maximum Ratings The MLN array is manufactured using the Littelfuse Multilayer technology process and is similar to the Continuous MLN Series Units Littelfuse ML and MLE Series of discrete leadless chips. Steady State Applied Voltage: Features DC Voltage Range (V ) 5.5 - 18 V M(DC) Operating Ambient Temperature Range (T ) -40 to +125 C A RoHS Compliant Low leakage Storage Temperature Range (T ) -40 to +150 C STG Four individual Operating voltage For ratings of individual members of a series, see device ratings and specifications table. devices in one chip up to 18V M(DC) ESD rated to IEC -40C to 125C 61000-4-2 (Level 4) operating temp range Additional Information AC characterized Low-profile, PCMCIA for impedance and compatible capacitance Low adjacent channel Datasheet Resources Samples crosstalk, -55dB at 10MHz (Typ) Applications Data, Diagnostic Communications/ I/O Ports Cellular Phones Analog Signal/ Computer/DSP Sensor Lines Products Portable/Hand- Industrial Instruments Held Products Including Medical Mobile 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/24/20Metal-Oxide Varistors (MOVs) Surface Mount Multilayer Varistors (MLVs) > MLN Series Device Ratings and Specifications Any Single Section Maximum Ratings (125C) Specifications (25C) Maximum Maximum Maximum Maximum Clamping Nominal Voltage Capacitance Continuous Non-repetitive Non-repetitive Typical ESD Supression Voltage (at at 1mA DC Test at 1 MHz Working Surge Current Surge Energy Voltage (Note1) Noted 8/20s) Current (1V p-p) Voltage (8/20s) (10/1000s) Part Number Current (Note 2) (Note 3) (Note 4) VN(DC) VN(DC) 8kV Contact 15kV Air C V I W V M(DC) TM TM C Min Max Peak Clamp Peak TYP MAX (V) (A) (J) (V) (V) (V) (V) (V) (V) (pF) (pF) V5.5MLN41206 5.5 30 0.10 15.5 at 2A 60 35 45 7.10 10.8 430 520 V9MLN41206 9.0 30 0.10 23.0 at 2A 95 50 75 11.0 16.0 250 300 V14MLN41206 14.0 30 0.10 30.0 at 2A 110 55 85 15.9 20.3 140 175 V18MLN41206 18.0 30 0.10 40.0 at 2A 165 63 100 22.0 28.0 100 125 V18MLN41206L 18.0 30 0.05 50.0 at 1A 200 95 130 25.0 35.0 45 75 NOTES: 1. Tested to IEC61000-4-2 Human Body Model (HBM) discharge test circuit. 2. Direct discharge to device terminals (IEC preffered test method). 3. Corona discharge through air (represents actual ESD event) 4. Capacitance may be customized, contact Sales. 5. The typical capacitance rating is the discrete component test result. Fig. 2 Peak Pulse Current Test Waveform for Clamping Fig. 1 Peak Current and Energy Derating Curve Voltage 100 100 90 90 80 O = Virtual origin of wave EXAMPLE: 70 1 100 o For an 8/20s current waveform -40 C t = Time from 10% to 90% of peak 50 60 8s = t1 = virtual front time o 25 C t = Virtual front time = 1.25 x t 1 50 o 20s = t2 = virtual time to half value 85 C t = Virtual time to half value 2 o 40 125 C (Impulse duration) 30 10 20 O t 10 1 TIME t 1 10 0 0.1mA 1mA10mA100mA 1mA t -55 50 60 70 80 CURRENT (A)90 100110 120130 140150 2 o AMBIENT TEMPERATURE ( C) FIGURE 7. STANDBY CURRENT AT NORMALIZED VARISTOR VOLTAGE AND TEMPERATURE (ANY SINGLE SECTION) 0 = Virtual Origin of Wave FIGURE 2. PEAK PULSE CURRENT TEST WAVEFORM FOR CLAMPING VO LTAGE Example: 1 FIGURE 1. PEAK CURRENT AND ENERGY DERATING CURVE T = Time from 10% to 90% of Peak For an 8/20 s Current Waveform: T = Rise Time = 1.25 x T 1 70 8s = T = Rise Time For applications exceeding 125C ambient temperature, the peak surge current and energy ratings must be T = Decay Time 1 2 reduced. 20s = T = Virtual Time 65 (Impulse Duration) 2 to Half Value 60 Typical P55 erformance Curves 50 Fig. 3 Equivalent Series Resistance Fig. 4 Impedance vs Frequency, 1206 Size 45 40 1MHz 10MHz 100MHz 1GHz FREQUENCY 10000 FIGURE 8. CAPACITANCE vs FREQUENCY 1000 1000 100 100 10 V5.5 V9 10 V14 1 V18 V18L 0.1 1 1MHz 10MHz 100MHz 1GHz 10GHz Frequency FIGURE 11. CAPACITANCE VS FREQUENCY, 1206 SIZE 0.1 0.11 10 1001000 Frequency (MHz) FIGURE 12. IMPEDANCE vs FREQUENCY, 1206 SIZE 2020 Littelfuse, Inc. Specifications are subject to change without notice. Revised: 02/24/20 OHMS NORMALIZED VARISTOR VOLTAGE (%) CAPACITANCE (pF) PERCENT OF RATED VALUE Impeance Z () PERCENT OF PEAK VALUE

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
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