Product Information

NSVBAV70TT3G

NSVBAV70TT3G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching DUAL SWITCHING DIODE

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1219 ea
Line Total: USD 1.12

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

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NSVBAV70TT3G
ON Semiconductor

1 : USD 1.1219
10 : USD 0.9296
100 : USD 0.1977
500 : USD 0.1303
1000 : USD 0.0887
2500 : USD 0.0694
10000 : USD 0.0577

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Height
Length
Width
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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BAV70T, NSVBAV70T Dual Switching Diode Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant ANODE 1 3 CATHODE 2 MAXIMUM RATINGS (T = 25C) A ANODE Rating Symbol Max Unit MARKING Reverse Voltage V 100 Vdc R DIAGRAM Forward Current I 200 mAdc F 3 Peak Forward Surge Current I 500 mAdc FM(surge) CASE 463 A4 M SOT416/SC75 THERMAL CHARACTERISTICS 2 STYLE 3 1 Characteristic Symbol Max Unit 1 Total Device Dissipation, P D FR4 Board (Note 1) 225 mW A4 = Specific Device Code T = 25C A M = Date Code Derated above 25C 1.8 mW/C = PbFree Package Thermal Resistance, R 555 C/W JA Junction to Ambient (Note 1) ORDERING INFORMATION Total Device Dissipation, P D Device Package Shipping FR4 Board (Note 2) 360 mW T = 25C A BAV70TT1G SOT416 3000 / Tape & Derated above 25C 2.9 mW/C (Pb-Free) Reel Thermal Resistance, R 345 C/W JA NSVBAV70TT1G SOT416 3000 / Tape & JunctiontoAmbient (Note 2) (Pb-Free) Reel Junction and Storage T , T 55 to C J stg NSVBAV70TT3G SOT416 10000 / Tape & Temperature Range +150 (Pb-Free) Reel Stresses exceeding those listed in the Maximum Ratings table may damage the For information on tape and reel specifications, device. If any of these limits are exceeded, device functionality should not be including part orientation and tape sizes, please assumed, damage may occur and reliability may be affected. refer to our Tape and Reel Packaging Specifications 1. FR4 Minimum Pad Brochure, BRD8011/D. 2. FR4 1.0 1.0 Inch Pad Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: April, 2015 Rev. 6 BAV70TT1/DBAV70T, NSVBAV70T ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) (BR) Reverse Voltage Leakage Current (Note 3) (V = 100 Vdc) I 1.0 Adc R R (V = 50 Vdc) I 100 nAdc R R Diode Capacitance C 1.5 pF D (V = 0, f = 1.0 MHz) R Forward Voltage V mVdc F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 100 , I = 1.0 mAdc) (Figure 1) F R L R(REC) Forward Recovery Voltage V 1.75 V RF (I = 10 mAdc, t = 20 ns) (Figure 2) F r 3. For each individual diode while the second diode is unbiased. www.onsemi.com 2

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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