Product Information

BYR29X-800PQ

BYR29X-800PQ electronic component of WeEn Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching BYR29X-800P/TO-220F/STANDARD M
Manufacturer: WeEn Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2969 ea
Line Total: USD 1.3

3995 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3316 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

BYR29X-800PQ
WeEn Semiconductor

1 : USD 0.9124
10 : USD 0.795
100 : USD 0.5636
500 : USD 0.4794
1000 : USD 0.42
2000 : USD 0.3773
5000 : USD 0.3631
10000 : USD 0.3394
25000 : USD 0.3394

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

BYR29X-800P Ultrafast power diode 5 May 2016 Product data sheet 1. General description Ultrafast power diode in a SOD113 (2-lead TO-220F) plastic package. 2. Features and benefits Fast switching Low forward voltage drop Soft recovery characteristic 3. Applications Discontinuous Current Mode (DCM) Power Factor Correction (PFC) High frequency switched-mode power supplies TV power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 800 V RRM voltage I average forward = 0.5 T 88 C square-wave - - 8 A F(AV) h current pulse Fig. 1 Fig. 2 Fig. 3 I repetitive peak forward = 0.5 t = 25 s T 88 C - - 16 A FRM p h current square-wave pulse I non-repetitive peak t = 10 ms T = 25 C sine-wave - - 80 A FSM p j(init) forward current pulse Fig. 4 t = 8.3 ms T = 25 C sine-wave - - 88 A p j(init) pulse Fig. 4 Static characteristics V forward voltage I = 8 A T = 25 C Fig. 6 - 1.4 1.7 V F F j I = 8 A T = 150 C Fig. 6 - 1.2 1.5 V F j Dynamic characteristics t reverse recovery time I = 1 A V = 30 V dI /dt = 100 A/s - 40 55 ns rr F R F T = 25 C Fig. 7 jWeEn Semiconductors BYR29X-800P Ultrafast power diode 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode K A mb 001aaa020 2 A anode mb n.c. mounting base isolated 1 2 TO-220F (SOD113) BYR29X-800P All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2016. All rights reserved Product data sheet 5 May 2016 2 / 10

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Ween Semiconductor may also be referenced as

WE EN SEMICONDUCTOR CO. LTD.
WE3
WE4
WeEn
WeEn Semicon
WeEn Semiconductor(Hong Kong)Co.,Limited
WeEn Semiconductors

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