Product Information

NSR0340V2T5G

NSR0340V2T5G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers SOD523 SCHTY BARRIER DIODE
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



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Availability Price Quantity
0 - WHS 1

MOQ : 5953
Multiples : 1

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NSR0340V2T5G
ON Semiconductor

5953 : USD 0.0547
N/A

0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

NSR0340V2T5G
ON Semiconductor

1 : USD 1.1486
10 : USD 0.8895
100 : USD 0.202
500 : USD 0.1336
1000 : USD 0.1026
2500 : USD 0.0801
8000 : USD 0.0705
N/A

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Additional Infomation About Product

NSR0340V2 Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dcdc converter, clamping and protection applications in portable devices. NSR0340V2 in a SOD 523 miniature package enables designers to meet the challenging task of achieving higher efficiency and meeting NSR0340V2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 600 C/W JA Total Power Dissipation T = 25C P 200 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 300 C/W JA Total Power Dissipation T = 25C 400 mW P A D Junction and Storage Temperature Range T , T 55 to +150 C J stg 1. Mounted onto a 4 in square FR4 board 10 mm sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. 2. Mounted onto a 4 in square FR4 board 1 in sq. 1 oz. Cu 0.06 thick singlesided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 0.2 1.0 R (V = 25 V) 0.5 3.0 R (V = 40 V) 1.5 6.0 R Forward Voltage V mV F (I = 10 mA) 310 350 F (I = 100 mA) 410 450 F (I = 200 mA) 470 510 F Total Capacitance pF CT (V = 10 V, f = 1 MHz) 6.0 R Reverse Recovery Time t ns rr (I = I = 10 mA, I = 1.0 mA) 5.0 F R R DC Current Source t t + r p 0.1 F 0 V 10% I 90% F 750 H V R 0.1 F 50 Output Pulse Generator Pulse Output Generator I F DUT Adjust for I RM t rr R = 50 L i = 1 mA R(REC) I RM Current Output Pulse Transformer (I = I = 10 mA measured F RM at i = 1 mA) R(REC) 50 Input Oscilloscope 1. DC Current Source is adjusted for a Forward Current (I ) of 10 mA. F 2. Pulse Generator Output is adjusted for a Peak Reverse Recovery Current I of 10 mA. RM 3. Pulse Generator transition time << t . rr 4. I is measured at 1 mA. Typically 0.1 X I or 0.25 X I . R(REC) RM RM 5. t t p rr Figure 1. Recovery Time Equivalent Test Circuit

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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