Product Information

NRVUD320W1T4G

NRVUD320W1T4G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers REC DPAK 3A 200V ULT

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

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NRVUD320W1T4G
ON Semiconductor

1 : USD 1.0821
10 : USD 0.9556
100 : USD 0.584
500 : USD 0.4755
1000 : USD 0.391
2500 : USD 0.3444
5000 : USD 0.3335
N/A

Obsolete
     
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RoHS - XON
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Switch-mode Power Rectifier DPAK Surface Mount Package MURD320, NRVUD320, SURD8320 www.onsemi.com These stateoftheart devices are designed for use in switching power supplies, inverters and as free wheeling diodes. ULTRAFAST RECTIFIER Features 3.0 AMPERES, 200 VOLTS Ultrafast 35 Nanosecond Recovery Time Low Forward Voltage Drop Low Leakage NRVUD, SURD8 Prefixes for Automotive and Other Applications DPAK Requiring Unique Site and Control Change Requirements CASE 369C AECQ101 Qualified and PPAP Capable 1 1 These Devices are PbFree and are RoHS Compliant* 4 4 3 3 Mechanical Characteristics STYLE 3 STYLE 8 Case: Epoxy, Molded Weight: 0.4 Gram (Approximately) MARKING DIAGRAM Finish: All External Surfaces Corrosion Resistant and Terminal AYWW AYWW Leads are Readily Solderable U U Lead and Mounting Surface Temperature for Soldering Purposes: 320G 320W1G 260C Max. for 10 Seconds MURD320T4G NRVUD320W1T4G ESD Ratings: SURD8320T4G Machine Model = C (> 400 V) NRVUD320VT4G Human Body Model = 3B (> 8 kV) A = Assembly Location** Y = Year WW = Work Week MAXIMUM RATINGS G = PbFree Package Rating Symbol Value Unit **The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is Peak Repetitive Reverse Voltage V 200 V RRM stamped in the package bottom (molding ejecter Working Peak Reverse Voltage V RWM DC Blocking Voltage V pin), the front side assembly code may be blank. R Average Rectified Forward Current I A F(AV) ORDERING INFORMATION (T = 158C) 3.0 C Device Package Shipping Peak Repetitive Forward Current I A FRM (Square Wave, Duty = 0.5, 6.0 MURD320T4G DPAK 2500 / Tape & T = 158C) C (PbFree) Reel NonRepetitive Peak Surge Current I A FSM NRVUD320VT4G DPAK 2500 / Tape & (Surge Applied at Rated Load 75 (PbFree) Reel Conditions Halfwave, 60 Hz) NRVUD320W1T4G DPAK 2500 / Tape & Operating Junction and Storage T , T 65 to +175 C J stg (PbFree) Reel Temperature Range NRVUD320W1T4G DPAK 2500 / Tape & Stresses exceeding those listed in the Maximum Ratings table may damage the VF01 (PbFree) Reel device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. SURD8320T4G DPAK 2500 / Tape & (PbFree) Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: August, 2020 Rev. 12 MURD320/DMURD320, NRVUD320, SURD8320 THERMAL CHARACTERISTICS Characteristics Symbol Value Unit Thermal Resistance JunctiontoCase R 6 C/W JC Thermal Resistance JunctiontoAmbient (Note 1) R 80 C/W JA 1. Rating applies when surface mounted on the minimum pad sizes recommended. ELECTRICAL CHARACTERISTICS Characteristics Symbol Value Unit Maximum Instantaneous Forward Voltage Drop (Note 2) v Volts F (i = 3 Amps, T = 25C) 0.95 F J (i = 3 Amps, T = 125C) 0.75 F J Maximum Instantaneous Reverse Current (Note 2) i A R (T = 25C, Rated dc Voltage) 5 J (T = 125C, Rated dc Voltage) 500 J Maximum Reverse Recovery Time t ns rr 35 (I = 1 Amp, di/dt = 50 Amps/ s, V = 30 V, T = 25C) F R J (I = 0.5 Amp, i = 1 Amp, I = 0.25 A, V = 30 V, T = 25C) 25 F R REC R J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. 100 80 T = 175C J 40 70 20 150C 8.0 50 4.0 2.0 100C 0.8 30 0.4 0.2 20 0.08 25C 0.04 0.02 0.008 10 0.004 0.002 7.0 0620 400 80 100 120 140 160 180 200 5.0 V , REVERSE VOLTAGE (VOLTS) R Figure 2. Typical Reverse Current* 3.0 * The curves shown are typical for the highest voltage device in the 175C T = 25C J voltage grouping. Typical reverse current for lower voltage selections 2.0 can be estimated from these curves if V is sufficiently below rated R V . R 150C 100C 14 1.0 SINE WAVE 13 SQUARE WAVE 12 0.7 11 5.0 dc 10 0.5 9.0 10 8.0 I /I = 20 7.0 PK AV 0.3 6.0 5.0 0.2 4.0 3.0 T = 175C J 2.0 0.1 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10 v INSTANTANEOUS VOLTAGE (VOLTS) F, I , AVERAGE FORWARD CURRENT (AMPS) F(AV) Figure 1. Typical Forward Voltage Figure 3. Average Power Dissipation www.onsemi.com 2 i , INSTANTANEOUS FORWARD CURRENT (AMPS) F I , REVERSE CURRENT ( A) R P , AVERAGE POWER DISSIPATION (WATTS) F(AV)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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