Product Information

MMSD914T3G

MMSD914T3G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching 100V 200mA

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0508 ea
Line Total: USD 0.05

41963 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
41963 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1

Stock Image

MMSD914T3G
ON Semiconductor

1 : USD 0.0508
10 : USD 0.0503
25 : USD 0.0496
100 : USD 0.0256
250 : USD 0.0254
500 : USD 0.0217
1000 : USD 0.0206
3000 : USD 0.0156
6000 : USD 0.0154
15000 : USD 0.0154
30000 : USD 0.0154

41963 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 472
Multiples : 1

Stock Image

MMSD914T3G
ON Semiconductor

472 : USD 0.0254
500 : USD 0.0217
1000 : USD 0.0206
3000 : USD 0.0156
6000 : USD 0.0154

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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MMSD914, SMMSD914 Switching Diode, High Speed, 100 V Features SOD123 Surface Mount Package MMSD914, SMMSD914 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 Adc) V 100 Vdc BR (BR) Reverse Voltage Leakage Current I R (V = 20 Vdc) 25 nAdc R (V = 75 Vdc) 5.0 Adc R Forward Voltage (I = 10 mAdc) V 1000 mVdc F F Diode Capacitance (V = 0 Vdc, f = 1.0 MHz) C 4.0 pF R D Reverse Recovery Time (I = I = 10 mAdc) (Figure 1) t 4.0 ns F R rr 820 +10 V 2 k 0.1 F I F t t t r p I F 100 H t t 10% 0.1 F rr DUT 90% 50 OUTPUT 50 INPUT i = 1 mA PULSE SAMPLING R(REC) I R GENERATOR OSCILLOSCOPE V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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