Product Information

MC74HC574AFELG

MC74HC574AFELG electronic component of ON Semiconductor

Datasheet
Flip Flop D-Type Bus Interface Pos-Edge 3-ST 1-Element Automotive 20-Pin SO EIAJ T/R

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

844: USD 0.4986 ea
Line Total: USD 420.82

8813 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 844  Multiples: 844
Pack Size: 844
Availability Price Quantity
1322 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1363
Multiples : 1363

Stock Image

MC74HC574AFELG
ON Semiconductor

1363 : USD 0.5356

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Circuits
Logic Family
Logic Type
Polarity
Input Type
Output Type
Propagation Delay Time
High Level Output Current
Low Level Output Current
Supply Voltage - Min
Supply Voltage - Max
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Brand
Number Of Input Lines
Number Of Output Lines
Factory Pack Quantity :
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MC74HC574A Octal 3-State Noninverting D Flip-Flop HighPerformance SiliconGate CMOS The MC74HC574A is identical in pinout to the LS574. The device MC74HC574A Design Criteria Value Units Internal Gate Count* 66.5 ea. Internal Gate Propagation Delay 1.5 ns Internal Gate Power Dissipation 5.0 W Speed Power Product 0.0075 pJ *Equivalent to a twoinput NAND gate. MAXIMUM RATINGS Symbol Parameter Value Unit V DC Supply Voltage 0.5 to +7.0 V CC V DC Input Voltage 0.5 to V + 0.5 V I CC V DC Output Voltage (Note 1) 0.5 to V + 0.5 V O CC I DC Input Diode Current 20 mA IK I DC Output Diode Current 35 mA OK I DC Output Sink Current 35 mA O I DC Supply Current per Supply Pin 75 mA CC I DC Ground Current per Ground Pin 75 mA GND T Storage Temperature Range 65 to +150 C STG T Lead Temperature, 1 mm from Case for 10 Seconds 260 C L T Junction Temperature under Bias +150 C J Thermal Resistance SOIC 96 C/W JA TSSOP 128 P 500 mW Power Dissipation in Still Air at 85 C SOIC D TSSOP 450 MSL Moisture Sensitivity Level 1 F Flammability Rating Oxygen Index: 30% 35% UL 94 V0 0.125 in R V ESD Withstand Voltage Human Body Model (Note 2) > 4000 V ESD Machine Model (Note 3) > 300 Charged Device Model (Note 4) > 1000 I Latchup Performance Above V and Below GND at 85 C (Note 5) 300 mA Latchup CC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. I absolute maximum rating must be observed. O 2. Tested to EIA/JESD22A114A. 3. Tested to EIA/JESD22A115A. 4. Tested to JESD22C101A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING CONDITIONS Symbol Parameter Min Max Unit V DC Supply Voltage (Referenced to GND) 2.0 6.0 V CC V , V DC Input Voltage, Output Voltage (Referenced to GND) 0 V V I O CC T Operating Temperature, All Package Types 55 +125 C A t , t Input Rise and Fall Time (Figure 2) V = 2.0 V 0 1000 ns r f CC 0 500 V = 4.5 V CC 0 400 V = 6.0 V CC Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. 6. Unused inputs may not be left open. All inputs must be tied to a high or lowlogic input voltage level.

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

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