Product Information

ISL9R18120S3ST

ISL9R18120S3ST electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 18A 1200V Stealt
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

73: USD 0.6948 ea
Line Total: USD 50.72

0 - Global Stock
MOQ: 73  Multiples: 800
Pack Size: 800

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 800
Multiples : 800

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ISL9R18120S3ST
ON Semiconductor

800 : USD 0.7715
2400 : USD 0.7018

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 800
Multiples : 800

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ISL9R18120S3ST
ON Semiconductor

800 : USD 0.7212

0 - WHS 3


Ships to you between
Mon. 27 May to Thu. 30 May

MOQ : 1
Multiples : 1

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ISL9R18120S3ST
ON Semiconductor

1 : USD 2.0498
10 : USD 1.7772
30 : USD 1.6262
100 : USD 1.4874
500 : USD 1.3949
1000 : USD 1.3561

0 - WHS 4


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

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ISL9R18120S3ST
ON Semiconductor

1 : USD 4.5308
10 : USD 1.6156
100 : USD 1.2945
500 : USD 1.0667
800 : USD 1.0563

0 - WHS 5


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 73
Multiples : 800

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ISL9R18120S3ST
ON Semiconductor

73 : USD 0.6948
1600 : USD 0.6572
3200 : USD 0.644

0 - WHS 6


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 800
Multiples : 800

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ISL9R18120S3ST
ON Semiconductor

800 : USD 1.1272
1600 : USD 0.9563

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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Additional Infomation About Product

STEALTH Diode 18 A, 1200 V ISL9R18120G2, ISL9R18120S3S Description The ISL9R18120G2, ISL9R18120S3S is aSTEALTH diode www.onsemi.com optimized for low loss performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery ANODE current (I ) and exceptionally soft recovery under typical operating CATHODE RR CATHODE (BOTTOM SIDE conditions. This device is intended for use as a free wheeling or boost METAL) diode in power supplies and other power switching applications. Y&Z&3&K The low I and short ta phase reduce loss in switching transistors. R18120G2 RR The soft recovery minimizes ringing, expanding the range TO2472LD of conditions under which the diode may be operated without the use CASE 340CL of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. CATHODE (FLANGE) Features Y&Z&3&K Stealth Recovery t = 300 ns ( I = 18 A) rr F R18120S3S N/C Max Forward Voltage, V = 3.3 V ( T = 25C) F C ANODE 1200 V Reverse Voltage and High Reliability 2 Avalanche Energy Rated D PAK3 (TO263, 3LEAD) CASE 418AJ These Devices are PbFree and are RoHS Compliant Applications MARKING DIAGRAM Hard Switched PFC Boost Diode Y = ON Semiconductor Logo UPS Free Wheeling Diode &Z = Assembly Plant Code Motor Drive FWD &3 = Numeric Date Code &K = Lot Code SMPS FWD R18120G2, Snubber Diode R18120S3S = Specific Device Code SYMBOL K A ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2002 1 Publication Order Number: March, 2020 Rev. 3 ISL9R18120S3S/DISL9R18120G2, ISL9R18120S3S DEVICE MAXIMUM RATINGS (T = 25C unless otherwise noted) C Parameter Symbol Ratings Unit Repetitive Peak Reverse Voltage V 1200 V RRM Working Peak Reverse Voltage V 1200 V RWM DC Blocking Voltage V 1200 V R Average Rectified Forward Current (T = 92C) I 18 A C F(AV) Repetitive Peak Surge Current (20 kHz Square Wave) I 36 A FRM Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) I 200 A FSM Power Dissipation P 125 W D Avalanche Energy (1 A, 40 mH) E 20 mJ AVL Operating and Storage Temperature Range T T 55 to +175 C J, STG Maximum Temperature for Soldering T 300 C L Leads at 0.063 in (1.6 mm) from Case for 10 s T 260 C PKG Package Body for 10 s Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Device Device Marking Package Packing Method Tape Width Quantity ISL9R18120G2 R18120G2 TO2472LD Tube N/A 30 2 ISL9R18120S3ST R18120S3S TO2633LD (D PAK) Reel 24 mm 800 THERMAL CHARACTERISTICS Parameter Symbol Test Conditions Min Typ Max Unit Thermal Resistance Junction to Case R TO247, TO263 1.0 C/W JC Thermal Resistance Junction to Ambient R TO247 30 C/W JA Thermal Resistance Junction to Ambient R TO263 62 C/W JA www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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