ISL9R460PF2 4 A, 600 V, STEALTH Diode Description The ISL9R460PF2 is a STEALTH diode optimized for low loss www.onsemi.com performance in high frequency hard switched applications. The STEALTH family exhibits low reverse recovery current (I ) and RR exceptionally soft recovery under typical operating conditions. This K device is intended for use as a free wheeling or boost diode in power supplies and other power switching applications. The low I and RR short ta phase reduce loss in switching transistors. The soft recovery minimizes ringing, expanding the range of conditions under which the A diode may be operated without the use of additional snubber circuitry. Consider using the STEALTH diode with an SMPS IGBT to provide the most efficient and highest power density design at lower cost. Features Ultrafast Recovery, t = 17 ns ( I = 4 A) RR F Max Forward Voltage, V = 2.4 V ( T = 25C) F C 600 V Reverse Voltage and High Reliability Cathode Anode Avalanche Energy Rated This Device is PbFree and is RoHS Compliant TO220, 2Lead CASE 221AS Applications SMPS Hard Switched PFC Boost Diode MARKING DIAGRAM UPS Free Wheeling Diode Motor Drive FWD SMPS FWD Snubber Diode Y&Z&3&K R460PF2 Y = ON Semiconductor Logo &Z&3 = Data Code (Year & Week) &K = Lot R460PF2 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2004 1 Publication Order Number: March, 2019 Rev. 3 ISL9R460PF2/DISL9R460PF2 DEVICE MAXIMUM RATINGS T = 25C unless otherwise noted C Symbol Parameter Rating Unit V Peak Repetitive Reverse Voltage 600 V RRM V Working Peak Reverse Voltage 600 V RWM V DC Blocking Voltage 600 V R I Average Rectified Forward Current (T = 108C) 4 A F(AV) C I Repetitive Peak Surge Current (20 kHz Square Wave) 8 A FRM I Nonrepetitive Peak Surge Current (Halfwave 1 Phase 60 Hz) 50 A FSM P Power Dissipation 22 W D E Avalanche Energy (0.5 A, 80 mH) 10 mJ AVL T , T Operating and Storage Temperature Range 55 to 175 C J STG Maximum Temperature for Soldering T 300 C T L PKG Leads at 0.063in (1.6 mm) from Case for 10s Package Body for 10s, See Techbrief TB334 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity ISL9R460PF2 R460PF2 Tube N/A N/A 50 TO220F2L ELECTRICAL CHARACTERISTICS T = 25C unless otherwise noted C Parameter Conditions Min Typ Max Unit OFF STATE CHARACTERISTICS I Instantaneous Reverse Current V = 600 V T = 25C 100 A R R C T = 125C 1.0 mA C ON STATE CHARACTERISTICS V Instantaneous Forward Voltage I = 4 A T = 25C 2.0 2.4 V F F C T = 125C 1.6 2.0 V C DYNAMIC CHARACTERISTICS C Junction Capacitance 19 pF V = 10 V, I = 0 A J R F SWITCHING CHARACTERISTICS t Reverse Recovery Time I = 1 A, di /dt = 100 A/ s, V = 30 V 17 20 ns RR F F R I = 4 A, dI /dt = 100 A/ s, V = 30 19 22 ns F F R V I = 4 A, t Reverse Recovery Time 17 ns F RR di /dt = 200 A/ s, F I Reverse Recovery Current 2.6 A RR V = 390 V, T = 25C R C Q Reverse Recovered Charge 22 nC RR I = 4 A, t Reverse Recovery Time 77 ns F RR di /dt = 200 A/ s, V = 390 V, F R S Softness Factor (t /t ) 4.2 b a T = 125C C I Reverse Recovery Current 2.8 A RR Q Reverse Recovered Charge 100 nC RR www.onsemi.com 2