The HGTG5N120BND is an IGBT Transistor 21a 1200V IGBT NPT Series N-Ch manufactured by ON Semiconductor. It is an insulated gate bipolar transistor (IGBT) of the NPT series with an N-Channel type of construction and a maximum collector-emitter voltage (V(CES)) of 1200V. It is capable of wave soldering in the through hole technique. It is also able to handle high frequency switching applications due to its high speed switching capabilities. The HGTG5N120BND has an on-resistance of 18.9 mO, a thermal resistance of 1.9 °C/W, and a continuous collector current rating (I(C)) of 21A. This is ideal for high-performance and reliable switching functions in various applications such as in motor control, inverters, welding, and UPS power.