HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Data Sheet December 2001 600V, SMPS Series N-Channel IGBT with Features Anti-Parallel Hyperfast Diode >100kHz Operation . . . . . . . . . . . . . . . . . . . . . 390V, 12A The HGTG12N60A4D, HGTP12N60A4D and 200kHz Operation . . . . . . . . . . . . . . . . . . . . . . . 390V, 9A HGT1S12N60A4DS are MOS gated high voltage switching 600V Switching SOA Capability devices combining the best features of MOSFETs and o bipolar transistors. These devices have the high input Typical Fall Time. . . . . . . . . . . . . . . . . 70ns at T = 125 C J impedance of a MOSFET and the low on-state conduction Low Conduction Loss loss of a bipolar transistor. The much lower on-state voltage o o drop varies only moderately between 25 C and 150 C. The Temperature Compensating SABER Model IGBT used is the development type TA49335. The diode www.fairchildsermi.com used in anti-parallel is the development type TA49371. Related Literature This IGBT is ideal for many high voltage switching - TB334 Guidelines for Soldering Surface Mount Components to PC Boards applications operating at high frequencies where low conduction losses are essential. This device has been Packaging optimized for high frequency switch mode power supplies. JEDEC TO-220AB ALTERNATE VERSION Formerly Developmental Type TA49337. COLLECTOR (FLANGE) Ordering Information PART NUMBER PACKAGE BRAND E C HGTG12N60A4D TO-247 12N60A4D G HGTP12N60A4D TO-220AB 12N60A4D HGT1S12N60A4DS TO-263AB 12N60A4D JEDEC TO-263AB NOTE: When ordering, use the entire part number. Add the suffix 9A to obtain the TO-263AB variant in tape and reel, e.g. HGT1S12N60A4DS9A. COLLECTOR (FLANGE) G Symbol E C JEDEC STYLE TO-247 E G C G E COLLECTOR (FLANGE) Fairchild CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. BHGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS o Absolute Maximum Ratings T = 25 C, Unless Otherwise Specified C HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BV 600 V CES Collector Current Continuous o At T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 54 A C C25 o At T = 110 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 23 A C C110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I 96 A CM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 20 V GES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V 30 V GEM o Switching Safe Operating Area at T = 150 C, Figure 2 . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V J o Power Dissipation Total at T = 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P 167 W C D o o Power Dissipation Derating T > 25 C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33 W/ C C o Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . T , T -55 to 150 C J STG Maximum Temperature for Soldering o Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 300 C L o Package Body for 10s, see Tech Brief 334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T 260 C pkg CAUTION: Stresses above those listed in Absolute Maximum Ratings may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTE: 1. Pulse width limited by maximum junction temperature. o Electrical Specifications T = 25 C, Unless Otherwise Specified J PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BV I = 250 A, V = 0V 600 - - V CES C GE o Collector to Emitter Leakage Current I V = 600V T = 25 C - - 250 A CES CE J o T = 125C- - 2.0 mA J o Collector to Emitter Saturation Voltage V I = 12A, T = 25C- 2.0 2.7 V CE(SAT) C J V = 15V o GE T = 125C- 1.6 2.0 V J Gate to Emitter Threshold Voltage V I = 250 A, V = 600V - 5.6 - V GE(TH) C CE Gate to Emitter Leakage Current I V = 20V - - 250 nA GES GE o Switching SOA SSOA T = 150 C, R = 10 , V = 15V, 60 - - A J G GE L = 100 H, V = 600V CE Gate to Emitter Plateau Voltage V I = 12A, V = 300V - 8 - V GEP C CE On-State Gate Charge Q I = 12A, V = 15V - 78 96 nC g(ON) C GE V = 300V CE V = 20V - 97 120 nC GE o Current Turn-On Delay Time t IGBT and Diode at T = 25 C, -17 - ns d(ON)I J I = 12A, CE Current Rise Time t -8 - ns rI V = 390V, CE Current Turn-Off Delay Time t -96 - ns d(OFF)I V = 15V, GE R = 10, Current Fall Time t G -18 - ns fI L = 500 H, Turn-On Energy (Note 3) E -55 - J ON1 Test Circuit (Figure 24) Turn-On Energy (Note 3) E - 160 - J ON2 Turn-Off Energy (Note 2) E -50 - J OFF o Current Turn-On Delay Time t IGBT and Diode at T = 125 C, -17 - ns d(ON)I J I = 12A, CE Current Rise Time t -16 - ns rI V = 390V, V = 15V, CE GE Current Turn-Off Delay Time t - 110 170 ns d(OFF)I R = 10, G L = 500 H, Current Fall Time t -70 95 ns fI Test Circuit (Figure 24) Turn-On Energy (Note3) E -55 - J ON1 Turn-On Energy (Note 3) E - 250 350 J ON2 Turn-Off Energy (Note 2) E - 175 285 J OFF 2001 Fairchild Semiconductor Corporation HGTG12N60A4D, HGTP12N60A4D, HGT1S12N60A4DS Rev. 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