Product Information

FSB50250S

FSB50250S electronic component of ON Semiconductor

Datasheet
Motor Motion Ignition Controllers & Drivers Smart Power Module

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

76: USD 5.5509 ea
Line Total: USD 421.87

0 - Global Stock
MOQ: 76  Multiples: 76
Pack Size: 76
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 450
Multiples : 1

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FSB50250S
ON Semiconductor

450 : USD 7.5933

0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 76
Multiples : 76

Stock Image

FSB50250S
ON Semiconductor

76 : USD 5.5509

     
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RoHS - XON
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Operating Supply Voltage
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FSB50250S Smart Power Module (SPM) May 20May 200707 FSB50250S Smart Power Module (SPM ) Features General Description FSB50250S is a tiny smart power module (SPM ) based on 500V 1.0A 3-phase FRFET inverter including high voltage FRFET technology as a compact inverter solution for small integrated circuit (HVIC) power motor drive applications such as fan motors and water 3 divided negative dc-link terminals for inverter current sens- suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), ing applications and 3 half-bridge HVICs for FRFET gate driving. FSB50250S provides low electromagnetic interference (EMI) characteristics HVIC for gate driving and undervoltage protection with optimized switching speed. Moreover, since it employs 3/5V CMOS/TTL compatible, active-high interface FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based Optimized for low electromagnetic interference power module or one-chip solution. The package is optimized Isolation voltage rating of 1500Vrms for 1min. for the thermal performance and compactness for the use in the built-in motor application and any other application where the Surface mounted device package assembly space is concerned. FSB50250S is the most solution Moisture Sensitive Level(MSL) 3 for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units DC Link Input Voltage, V 500 V PN Drain-source Voltage of each FRFET I Each FRFET Drain Current, Continuous T = 25C 1.0 A D25 C I Each FRFET Drain Current, Continuous T = 80C 0.7 A D80 C I Each FRFET Drain Current, Peak T = 25C, PW < 100s 2.0 A DP C P Maximum Power Dissipation T = 25C, For Each FRFET 10 W D C V Control Supply Voltage Applied between V and COM 20 V CC CC V High-side Bias Voltage Applied between V and V 20 V BS B S V Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V IN T Operating Junction Temperature -20 ~ 150 C J T Storage Temperature -50 ~ 150 C STG Each FRFET under inverter operat- Junction to Case Thermal Resistance C/W R 9.3 JC ing condition (Note 1) 60Hz, Sinusoidal, 1 minute, Con- V Isolation Voltage 1500 V ISO rms nection pins to heatsink 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB50250S Rev. BFSB50250S Smart Power Module (SPM) Pin Descriptions Pin Number Pin Name Pin Description 1 COM IC Common Supply Ground 2 V Bias Voltage for U Phase High Side FRFET Driving B(U) 3 V Bias Voltage for U Phase IC and Low Side FRFET Driving CC(U) 4 IN Signal Input for U Phase High-side (UH) 5 IN Signal Input for U Phase Low-side (UL) 6 V Bias Voltage Ground for U Phase High Side FRFET Driving S(U) 7 V Bias Voltage for V Phase High Side FRFET Driving B(V) 8 V Bias Voltage for V Phase IC and Low Side FRFET Driving CC(V) 9 IN Signal Input for V Phase High-side (VH) 10 IN Signal Input for V Phase Low-side (VL) 11 V Bias Voltage Ground for V Phase High Side FRFET Driving S(V) 12 V Bias Voltage for W Phase High Side FRFET Driving B(W) 13 V Bias Voltage for W Phase IC and Low Side FRFET Driving CC(W) 14 IN Signal Input for W Phase High-side (WH) 15 IN Signal Input for W Phase Low-side (WL) 16 V Bias Voltage Ground for W Phase High Side FRFET Driving S(W) 17 P Positive DCLink Input 18 U Output for U Phase 19 N Negative DCLink Input for U Phase U 20 N Negative DCLink Input for V Phase V 21 V Output for V Phase 22 N Negative DCLink Input for W Phase W 23 W Output for W Phase (1) COM (2) V (17) P B(U) (3) V VCC VB CC(U) (4) IN HIN HO (UH) (18) U (5) IN LIN VS (UL) COM LO (6) V S(U) (19) N U (7) V B(V) (8) V VCC VB (20) N CC(V) V (9) IN HIN HO (VH) (21) V (10) IN LIN VS (VL) COM LO (11) V S(V) (12) V B(W) (13) V VCC VB (22) N CC(W) W (14) IN HIN HO (WH) (23) W (15) IN LIN VS (WL) COM LO (16) V S(W) Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM . External connections should be made as indicated in Fig- ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) 2 www.fairchildsemi.com FSB50250S Rev. B

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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