Product Information

FSB50450T

FSB50450T electronic component of ON Semiconductor

Datasheet
Motor/Motion/Ignition Controllers & Drivers Smart Power Module

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

77: USD 5.5173 ea
Line Total: USD 424.83

0 - Global Stock
MOQ: 77  Multiples: 77
Pack Size: 77
Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

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FSB50450T
ON Semiconductor

1 : USD 4.122
10 : USD 3.7067
25 : USD 3.315
100 : USD 3.0709

0 - WHS 2


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 77
Multiples : 77

Stock Image

FSB50450T
ON Semiconductor

77 : USD 5.5173

0 - WHS 3


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 12
Multiples : 1

Stock Image

FSB50450T
ON Semiconductor

12 : USD 3.605
25 : USD 3.2383
50 : USD 3.0886

     
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RoHS - XON
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FSB50450T Smart Power Module (SPM) May 2007 FSB50450T Smart Power Module (SPM ) Features General Description FSB50450T is a tiny smart power module (SPM ) based on 500V 3.0A 3-phase FRFET inverter including high voltage FRFET technology as a compact inverter solution for small integrated circuit (HVIC) power motor drive applications such as fan motors and water 3 divided negative dc-link terminals for inverter current sens- suppliers. It is composed of 6 fast-recovery MOSFET (FRFET), ing applications and 3 half-bridge HVICs for FRFET gate driving. FSB50450T provides low electromagnetic interference (EMI) characteristics HVIC for gate driving and undervoltage protection with optimized switching speed. Moreover, since it employs 3/5V CMOS/TTL compatible, active-high interface FRFET as a power switch, it has much better ruggedness and larger safe operation area (SOA) than that of an IGBT-based Optimized for low electromagnetic interference power module or one-chip solution. The package is optimized Isolation voltage rating of 1500Vrms for 1min. for the thermal performance and compactness for the use in the built-in motor application and any other application where the Extended VB pin for PCB isolation assembly space is concerned. FSB50450T is the most solution for the compact inverter providing the energy efficiency, compactness, and low electromagnetic interference. Absolute Maximum Ratings Symbol Parameter Conditions Rating Units DC Link Input Voltage, V 500 V PN Drain-source Voltage of each FRFET I Each FRFET Drain Current, Continuous T = 25C 1.5 A D25 C I Each FRFET Drain Current, Continuous T = 100C 1.0 A D80 C I Each FRFET Drain Current, Peak T = 25C, PW < 100s 3.0 A DP C P Maximum Power Dissipation T = 25C, Each FRFET 10 W D C V Control Supply Voltage Applied between V and COM 20 V CC CC V High-side Bias Voltage Applied between V -U, V -V, V -W 20 V BS B(U) B(V) B(W) V Input Signal Voltage Applied between IN and COM -0.3 ~ VCC+0.3 V IN T Operating Junction Temperature -20 ~ 150 C J T Storage Temperature -50 ~ 150 C STG Each FRFET under inverter operating con- Junction to Case Thermal Resistance C/W R 8.9 JC dition (Note 1) 60Hz, Sinusoidal, 1 minute, Connection V Isolation Voltage 1500 V ISO rms pins to heatsink 2007 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FSB50450T Rev. BFSB50450T Smart Power Module (SPM) Pin Descriptions Pin Number Pin Name Pin Description 1 COM IC Common Supply Ground 2 V Bias Voltage for U Phase High Side FRFET Driving B(U) 3 V Bias Voltage for U Phase IC and Low Side FRFET Driving CC(U) 4 IN Signal Input for U Phase High-side (UH) 5 IN Signal Input for U Phase Low-side (UL) 6 NC No Connection 7 V Bias Voltage for V Phase High Side FRFET Driving B(V) 8 V Bias Voltage for V Phase IC and Low Side FRFET Driving CC(V) 9 IN Signal Input for V Phase High-side (VH) 10 IN Signal Input for V Phase Low-side (VL) 11 NC No Connection 12 V Bias Voltage for W Phase High Side FRFET Driving B(W) 13 V Bias Voltage for W Phase IC and Low Side FRFET Driving CC(W) 14 IN Signal Input for W Phase High-side (WH) 15 IN Signal Input for W Phase Low-side (WL) 16 NC No Connection 17 P Positive DCLink Input 18 U, V Output for U Phase & Bias Voltage Ground for High Side FRFET Driving S(U) 19 N Negative DCLink Input for U Phase U 20 N Negative DCLink Input for V Phase V 21 V, V Output for V Phase & Bias Voltage Ground for High Side FRFET Driving S(V) 22 N Negative DCLink Input for W Phase W 23 W, V Output for W Phase & Bias Voltage Ground for High Side FRFET Driving S(W) (1) COM (2) V (17) P B(U) (3) V VCC VB CC(U) (4) IN HIN HO (UH) (18) U, V (5) IN LIN VS S(U) (UL) COM LO (6) NC (19) N U (7) V B(V) (8) V VCC VB (20) N CC(V) V (9) IN HIN HO (VH) (21) V, V (10) IN LIN VS S(V) (VL) COM LO (11) NC (12) V B(W) (13) V VCC VB (22) N CC(W) W (14) IN HIN HO (WH) (23) W, V (15) IN LIN VS S(W) (WL) COM LO (16) NC Note: Source terminal of each low-side MOSFET is not connected to supply ground or bias voltage ground inside SPM . External connections should be made as indicated in Fig- ure 2 and 5. Figure 1. Pin Configuration and Internal Block Diagram (Bottom View) 2 www.fairchildsemi.com FSB50450T Rev. B

Tariff Desc

8542.39.23 No ..Linear/analogue and peripheral integrated circuits, timers, voltage regulators, A/D and D/A converters, telecommunication and modem integrated circuits, other than board level products Free

Electronic integrated circuits- Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
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FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
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