Product Information

FQA11N90C-F109

FQA11N90C-F109 electronic component of ON Semiconductor

Datasheet
MOSFET N Trench 900V 11A 5V @ 250uA 1.1 Ω @ 5.5A,10V TO-3P RoHS
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 25.2088 ea
Line Total: USD 25.21

77 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
76 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

FQA11N90C-F109
ON Semiconductor

1 : USD 24.04
10 : USD 21.4497
30 : USD 19.8097
90 : USD 18.3784

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Height
Length
Series
Transistor Type
Width
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
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Additional Infomation About Product

The FQA11N90C-F109 is a discrete, three terminal, R-TDSOT (Reverse Trench Super Junction) power Mosfet from ON Semiconductor. It offers excellent switching performance with low gate charge and low gate-to-drain charge. It is designed for high-speed switching applications in medium to high power applications. It has a maximum drain-source voltage of 900V, requires 5V gate-source voltage and a current of 250u µA, and a low resistance of 1.1 O at 5.5A/10V. This part is housed in TO-3P RoHS package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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