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HUFA76413DK8T F085 N-Channel Logic Level UltraFET Power MOSFET April 2016 HUFA76413DK8T F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56m General Description Features These N-Channel power MOSFETs are manufactured using the 150C Maximum Junction Temperature innovative UltraFET process. This advanced process UIS Capability (Single Pulse and Repetitive Pulse) technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is Ultra-Low On-Resistance r = 0.049, VGS = 10V DS(ON) capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse Ultra-Low On-Resistance r = 0.056, VGS = 5V DS(ON) recovery time and stored charge. It was designed for use in Qualified to AEC Q101 applications where power efficiency is important, such as switching regulators, switching convertors, motor drivers, relay RoHS Compliant drivers, low-voltage bus switches, and power management in portable and battery-operated products. Applications Motor and Load Control Powertrain Management MOSFET Maximum Ratings T = 25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 16 V GS Drain Current -Continuous (T = 25 C, V = 10V) 5.1 C GS -Continuous (T = 25 C, V = 5V) 4.8 C GS I A D -Continuous (T = 125 C, V = 5V, R = 228C/W) 1 C GS JA -Pulsed Figure 4 E Single Pulse Avalanche Energy (Note 1) 260 mJ AS Power Dissipation 2.5 W P D Derate Above 25 C 0.02 W/C T , T Operating and Storage Temperature -55 to +150 C J STG Thermal Characteristics 50 Thermal Resistance Junction to Ambient SO-8 (Note 2) R 191 C/W Thermal Resistance Junction to Ambient SO-8 (Note 3) JA 228 Thermal Resistance Junction to Ambient SO-8 (Note 4) Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 76413DK8 HUFA76413DK8T F085 SO-8 330mm 12mm 2500 units Notes: 1: Starting T = 25 C, L = 20mH, I = 5.1A J AS 2 2: R is 50 C/W when mounted on a 0.5 in copper pad on FR-4 at 1 second. JA 2 3: R is 191 C/W when mounted on a 0.027 in copper pad on FR-4 at 1000 seconds. JA 2 4: R is 228 C/W when mounted on a 0.006 in copper pad on FR-4 at 1000 seconds. JA 5: A suffix as F085P has been temporarily introduced in order to manage a double source strategy as Fairchild has officially announced in Aug 2014. 2016 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com HUFA76413DK8T F085 Rev. 2.4