Product Information

FDMT80080DC

FDMT80080DC electronic component of ON Semiconductor

Datasheet
MOSFET 80V N ch Dual Cool Power Trench MOSFET

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 8.6295 ea
Line Total: USD 8.63

7498 - Global Stock
Ships to you between
Fri. 31 May to Tue. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5368 - WHS 1


Ships to you between Fri. 31 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

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FDMT80080DC
ON Semiconductor

1 : USD 4.025
10 : USD 3.5765
25 : USD 3.5535
100 : USD 3.151
250 : USD 3.1165
500 : USD 2.9325
1000 : USD 2.7945
3000 : USD 2.622

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Configuration
Height
Length
Series
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclature that utilizes an underscore ( ), the underscore ( ) in the Fairchild part numbers will be changed to a dash (-). This document may contain device numbers with an underscore ( ). Please check the ON Semiconductor website to verify the updated device numbers. The most current and up-to-date ordering information can be found at www.onsemi.com. Please email any questions regarding the system integration to Fairchild questions onsemi.com. ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. TM FDMT80080DC N-Channel Dual Cool 88 PowerTrench MOSFET July 2015 FDMT80080DC TM N-Channel Dual Cool 88 PowerTrench MOSFET 80 V, 254 A, 1.35 m Features General Description Max r = 1.35 m at V = 10 V, I = 36 A This N-Channel MOSFET is produced using Fairchild DS(on) GS D Semiconductors advanced PowerTrench process. Max r = 1.82 m at V = 8 V, I = 31 A DS(on) GS D TM Advancements in both silicon and Dual Cool package Advanced Package and Silicon combination for low r DS(on) technologies have been combined to offer the lowest r DS(on) and high efficiency while maintaining excellent switching performance by extremely Next generation enhanced body diode technology, low Junction-to-Ambient thermal resistance. engineered for soft recovery Applications Low profile 8x8mm MLP package OringFET / Load Switching MSL1 robust package design Synchronous Rectification 100% UIL tested DC-DC Conversion RoHS Compliant Pin 1 G Pin 1 S G D S S D S S D D S D D D S D Top TM Bottom Dual Cool 88 MOSFET Maximum Ratings T = 25 C unless otherwise noted. A Symbol Parameter Ratings Units V Drain to Source Voltage 80 V DS V Gate to Source Voltage 20 V GS Drain Current -Continuous T = 25 C (Note 5) 254 C -Continuous T = 100 C (Note 5) 160 C I A D -Continuous T = 25 C (Note 1a) 36 A -Pulsed (Note 4) 1453 E Single Pulse Avalanche Energy (Note 3) 1734 mJ AS Power Dissipation T = 25 C 156 C P W D Power Dissipation T = 25 C (Note 1a) 3.2 A T , T Operating and Storage Junction Temperature Range -55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Case (Top Source) 1.6 JC R Thermal Resistance, Junction-to-Case (Bottom Drain) 0.8 JC R Thermal Resistance, Junction-to-Ambient (Note 1a) 38 JA R Thermal Resistance, Junction-to-Ambient (Note 1b) 81 C/W JA R Thermal Resistance, Junction-to-Ambient (Note 1i) 15 JA R Thermal Resistance, Junction-to-Ambient (Note 1j) 21 JA R Thermal Resistance, Junction-to-Ambient (Note 1k) 9 JA Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity TM 80080DC FDMT80080DC Dual Cool 88 13 13.3 mm 3000 units 2015 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FDMT80080DC Rev. 1.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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