Product Information

FDN336P

FDN336P electronic component of ON Semiconductor

Datasheet
Transistor: P-MOSFET; unipolar; -20V; -1.3A; 0.5W; SuperSOT-3

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.1365 ea
Line Total: USD 409.5

101850 - Global Stock
Ships to you between
Mon. 27 May to Fri. 31 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
101850 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN336P
ON Semiconductor

3000 : USD 0.1365
6000 : USD 0.1365
12000 : USD 0.1365
15000 : USD 0.1365
45000 : USD 0.1365

8730 - WHS 2


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN336P
ON Semiconductor

3000 : USD 0.1579

931 - WHS 3


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

FDN336P
ON Semiconductor

1 : USD 0.5811
25 : USD 0.4927
50 : USD 0.416
100 : USD 0.3406
250 : USD 0.3042

194 - WHS 4


Ships to you between
Mon. 03 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

FDN336P
ON Semiconductor

1 : USD 0.4578
10 : USD 0.373
30 : USD 0.3375
100 : USD 0.292
500 : USD 0.2723
1000 : USD 0.2605

2457 - WHS 5


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3
Multiples : 1

Stock Image

FDN336P
ON Semiconductor

3 : USD 0.6409
25 : USD 0.3328
71 : USD 0.2314
195 : USD 0.2184

95 - WHS 6


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 46
Multiples : 1

Stock Image

FDN336P
ON Semiconductor

46 : USD 0.1699

8730 - WHS 7


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 3000
Multiples : 3000

Stock Image

FDN336P
ON Semiconductor

3000 : USD 0.2859

     
Manufacturer
Product Category
Technology
Kind Of Package
Polarisation
Mounting
Case
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
Category
Brand Category
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDN336P FDN336P Single P-Channel 2.5V Specified PowerTrench MOSFET Features General Description 1.3 A, 20 V. R = 0.20 V = 4.5 V DS(ON) GS This P-Channel 2.5V specified MOSFET is produced R = 0.27 V = 2.5 V using ON Semiconductors advanced DS(ON) GS PowerTrench process that has been especially tailored Low gate charge (3.6 nC typical) to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. High performance trench technology for extremely low R DS(ON) These devices are well suited for portable electronics applications: load switching and power management, TM SuperSOT -3 provides low R and 30% DS(ON) battery charging circuits and DC/DC conversion. higher power handling capability than SOT23 in the same footprint D D S G S TM G SuperSOT -3 o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 20 V DSS V Gate-Source Voltage 8 V GSS I Drain Current Continuous (Note 1a) A D 1.3 Pulsed 10 P Maximum Power Dissipation (Note 1a) 0.5 W D (Note 1b) 0.46 T , T Operating and Storage Junction Temperature Range 55 to +150 C J STG Thermal Characteristics R Thermal Resistance, Junction-to-Ambient (Note 1a) 250 C/W JA Thermal Resistance, Junction-to-Case (Note 1) 75 R C/W JC Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity 336 FDN336P 7 8mm 3000 units Publication Order Number: 2005 Semiconductor Components Industries, LLC. FDN336P/D October-2017, Rev. 4

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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