Product Information

FDD2572-F085

FDD2572-F085 electronic component of ON Semiconductor

Datasheet
MOSFET N Trench 150V 29A (Tc) 4V @ 250uA 54 mΩ @ 9A,10V TO-252-2 (DPAK) RoHS

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.2834 ea
Line Total: USD 2.28

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between
Thu. 30 May to Tue. 04 Jun

MOQ : 1
Multiples : 1

Stock Image

FDD2572-F085
ON Semiconductor

1 : USD 2.1795
10 : USD 1.8641
30 : USD 1.6936
100 : USD 1.4976
500 : USD 1.3681
1000 : USD 1.3296

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
Drain Source Voltage Vdss
Continuous Drain Current Id
Power Dissipation Pd
Drain Source On Resistance Rdson@Vgs Id
Gate Threshold Voltage Vgsth@Id
Type
LoadingGif

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The FDD2572-F85 is a Metal Oxide Semiconductor Field Effect Transistor (MOSFET) manufactured by ON Semiconductor. This MOSFET features a N-Channel design, with a trench structure that utilizes 150V, 29A, and 4V at 250uA. It has a high current handling capability of 54mΩ at a 9A, 10V rate, and is offered in a TO-252-2 (DPAK) package that is compliant with the European Union's RoHS Directive. This device is suitable for applications such as reversible or pulsed-load switching, amplifier biasing, and load-line ballasting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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