Product Information

FDD2670

FDD2670 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor MOSFET N-CH 200V 18A Q-FET

Manufacturer: ON Semiconductor
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Price (USD)

1: USD 1.7798 ea
Line Total: USD 1.78

2413 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2395 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

FDD2670
ON Semiconductor

1 : USD 1.7798
10 : USD 1.5069
100 : USD 1.234
250 : USD 1.2102
500 : USD 1.0643
1000 : USD 0.9255
2500 : USD 0.916
5000 : USD 0.9053
10000 : USD 0.8804

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Tradename
Configuration
Series
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD2670 FDD2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 3.6 A, 200 V. R = 130 m V = 10 V DS(ON) GS specifically to improve t he overall efficiency of DC/DC converters using either synchronous or conventional Low gate charge switching PWM controllers. Fas t switching speed These MOSFET s feature faster switching and lower gate charge than other MOSFET s with comparable RDS specifications. High performance trench technology for extremely (ON) low R DS(ON) The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power High power and current handling capability supply designs with higher overall efficiency. D D G G S TO-252 S o Absolute Maximum Ratings T =25 C unless otherwise noted A Symbol Parameter Ratings Units V Drain-Source Voltage 200 V DSS V Gate-Source Voltage V GSS 20 I Drain Current Continuous (Note 1) 3.6 A D Drain Current Pulsed 20 P 70 W D Maximum Power Dissipation T = 25C (Note 1) C 3.2 T = 25C (Note 1a) A 1.3 TA = 25C (Note 1b) dv/dt Peak Diode Recovery dv/dt (Note 3) 3.2 V/ns T , T Operating and Storage Junction Temperature Range -55 to +150 J STG C Thermal Characteristics Thermal Resistance, Junction-to-Case (Note 1) 1.8 R C/W JC Thermal Resistance, Junction-to-Ambient (Note 1b) 96 R C/W JA Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity FDD2670 FDD2670 13 16mm 2500 units 2001 Semiconductor Components Industries, LLC. Publication Order Number: November-2017, Rev. 2 FDD2670/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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