Product Information

FDD14AN06LA0_F085

FDD14AN06LA0_F085 electronic component of ON Semiconductor

Datasheet
Fairchild Semiconductor MOSFET 60V N-CHAN PwrTrench

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 2500
Multiples : 2500

Stock Image

FDD14AN06LA0_F085
ON Semiconductor

2500 : USD 0.8928
5000 : USD 0.8184
10000 : USD 0.8102
15000 : USD 0.8021
20000 : USD 0.7941
25000 : USD 0.7861
30000 : USD 0.7783
50000 : USD 0.7704
100000 : USD 0.7628
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FDD14AN06LA0_F085
ON Semiconductor

1 : USD 3.78
10 : USD 1.424
100 : USD 1.077
500 : USD 0.9207
1000 : USD 0.7508
2500 : USD 0.727
5000 : USD 0.7042
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

FDD14AN06LA0_F085
ON Semiconductor

1 : USD 1.5713
5 : USD 1.418
15 : USD 1.0719
41 : USD 1.0177
N/A

Obsolete
0 - WHS 4

MOQ : 2500
Multiples : 2500

Stock Image

FDD14AN06LA0_F085
ON Semiconductor

2500 : USD 0.8863
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Series
Brand
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD14AN06LA0-F085 N-Channel PowerTrench MOSFET FDD14AN06LA0-F085 N-Channel PowerTrench MOSFET 60V, 50A, 14.6m Features Applications r = 12.8m (Typ.), V = 5V, I = 50A Motor / Body Load Control DS(ON) GS D Q (tot) = 25nC (Typ.), V = 5V ABS Systems g GS Low Miller Charge Powertrain Management Low Q Body Diode Injection Systems RR UIS Capability (Single Pulse and Repetitive Pulse) DC-DC converters and Off-line UPS Qualified to AEC Q101 Distributed Power Architectures and VRMs RoHS Compliant Primary Switch for 12V and 24V systems Formerly developmental type 83557 DRAIN (FLANGE) D GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current o 50 A Continuous (T < 100 C, V = 10V) C GS o I Continuous (T < 80 C, V = 5V) 50 A D C GS o o Continuous (T = 25 C, V = 5V, with R = 52 C/W) 9.5 A amb GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy (Note 1) 55 mJ AS Power dissipation 125 W P D o o Derate above 25C0.83W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R Maximum Thermal Resistance Junction to Case TO-252 1.2 C/W JC 2 Maximum Thermal Resistance Junction to Ambient TO-252, 1in o R 52 C/W JA copper pad area 2010 Semiconductor Components Industries, LLC. Publication Order Number: September-2017, Rev. 3 FDD14AN06LA0-F085/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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