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V = 10 V, I = 3.4 A This N-Channel MOSFET is produced using Fairchld Semicon- DS(on) GS D ductors advanced PowerTrench process that has been tai- R = 175 m (Typ.) V = 5 V, I = 2.1 A DS(on) GS D lored to minimize the on-state resistance and maintain superior Low Gate Charge (Typ.2.78 nC) switching performance. Low C (Typ. 2.04 pF) rss Fast Switching Application 100% Avalanche Tested Consumer Appliances Improved dv/dt Capability LED TV and Monitor RoHS Compliant Synchronous Rectification Uninterruptible Power Supply Micro Solar Inverter D D G G S D-PAK S o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C Symbol Parameter FDD1600N10ALZ Unit V Drain to Source Voltage 100 V DSS V Gate to Source Voltage 20 V GSS o - Continuous (T = 25 C) 6.8 C I Drain Current A D o - Continuous (T = 100 C) 4.3 C I Drain Current - Pulsed (Note 1) 13.6 A DM E Single Pulsed Avalanche Energy (Note 2) 5.08 mJ AS dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 V/ns o (T = 25 C) 14.9 W C P Power Dissipation D o o - Derate Above 25C0.12W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG o T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 Seconds 300 C L Thermal Characteristics Symbol Parameter Unit FDD1600N10ALZ R Thermal Resistance, Junction to Case, Max. 8.4 JC o C/W R Thermal Resistance, Junction to Ambient, Max. 87 JA 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 FDD1600N10ALZ Rev. C3