X-On Electronics has gained recognition as a prominent supplier of FDD13AN06A0_F085 mosfet across the USA, India, Europe, Australia, and various other global locations. FDD13AN06A0_F085 mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

FDD13AN06A0_F085 ON Semiconductor

FDD13AN06A0_F085 electronic component of ON Semiconductor
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See Product Specifications
Part No.FDD13AN06A0_F085
Manufacturer: ON Semiconductor
Category:MOSFET
Description: Fairchild Semiconductor MOSFET Trans N-Ch 60V 50 A 3-Pin 2Tab
Datasheet: FDD13AN06A0_F085 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1443 ea
Line Total: USD 1.14

Availability - 18900
Ships to you between
Fri. 21 Jun to Tue. 25 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
84875 - WHS 1


Ships to you between
Mon. 24 Jun to Thu. 27 Jun

MOQ : 127
Multiples : 1
127 : USD 0.9875

18900 - WHS 2


Ships to you between Fri. 21 Jun to Tue. 25 Jun

MOQ : 1
Multiples : 1
1 : USD 1.1443
10 : USD 1.0327
100 : USD 0.9235
500 : USD 0.8625
1000 : USD 0.7325
2500 : USD 0.7004
5000 : USD 0.6969
10000 : USD 0.6796
25000 : USD 0.6716

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Vgs - Gate-Source Breakdown Voltage
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Pd - Power Dissipation
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We are delighted to provide the FDD13AN06A0_F085 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDD13AN06A0_F085 and other electronic components in the MOSFET category and beyond.

ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. FDD13AN06A0-F085 N-Channel PowerTrench MOSFET FDD13AN06A0-F085 N-Channel PowerTrench MOSFET 60V, 50A, 13.5m Applications Features Motor / Body Load Control r = 11.5m (Typ.), V = 10V, I = 50A DS(ON) GS D ABS Systems Q (tot) = 22nC (Typ.), V = 10V g GS Powertrain Management Low Miller Charge Injection Systems Low Q Body Diode RR DC-DC converters and Off-line UPS UIS Capability (Single Pulse and Repetitive Pulse) Distributed Power Architectures and VRMs Qualified to AEC Q101 Primary Switch for 12V and 24V systems RoHS Compliant Formerly developmental type 82555 DRAIN (FLANGE) D GATE G SOURCE S TO-252AA FDD SERIES MOSFET Maximum Ratings T = 25C unless otherwise noted C Symbol Parameter Ratings Units V Drain to Source Voltage 60 V DSS V Gate to Source Voltage 20 V GS Drain Current o 50 A Continuous (T < 80 C, V = 10V) C GS I D o o Continuous (T = 25 C, V = 10V, R = 52 C/W) 9.9 A A GS JA Pulsed Figure 4 A E Single Pulse Avalanche Energy ( Note 1) 56 mJ AS Power dissipation 115 W P D o o Derate above 25C0.77W/ C o T , T Operating and Storage Temperature -55 to 175 C J STG Thermal Characteristics o R JC Thermal Resistance Junction to Case TO-252 1.3 C/W o R JA Thermal Resistance Junction to Ambient TO-252 100 C/W 2 o R JA Thermal Resistance Junction to Ambient TO-252, 1in copper pad area 52 C/W This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at:

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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