Product Information

FDB13AN06A0

FDB13AN06A0 electronic component of ON Semiconductor

Datasheet
Transistor: N-MOSFET; unipolar; 60V; 62A; 115W; D2PAK
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.1588 ea
Line Total: USD 1.16

28 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
28 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

FDB13AN06A0
ON Semiconductor

1 : USD 1.1588
10 : USD 1.1588
25 : USD 1.1588

776 - WHS 2


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 800
Multiples : 800

Stock Image

FDB13AN06A0
ON Semiconductor

800 : USD 1.1895
1600 : USD 1.1895
2400 : USD 1.1895
3200 : USD 1.1895
4000 : USD 1.1895

28 - WHS 3


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 7
Multiples : 1

Stock Image

FDB13AN06A0
ON Semiconductor

7 : USD 1.1588

Read More Specifications

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Type Of Transistor
Drain-Source Voltage
Gate-Source Voltage
Drain Current
On-State Resistance
Gate Charge
Power Dissipation
LoadingGif

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Additional Infomation About Product

The FDB13AN06A0 is an N-Channel MOSFET that is part of the NexFET power MOSFET series from ON Semiconductor. It has a low On-resistance and low gate charge, making it suitable for power applications. This part features a maximum drain-source voltage of 60V, a 11A Continuous Drain Current Rating, and a maximum drain-source On-resistance of 13m Ohms. It is RoHS compliant and comes in a thermally enhanced 2x2x0.55mm package.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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OOF
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