Product Information

FDB12N50FTM_WS

FDB12N50FTM_WS electronic component of ON Semiconductor

Datasheet
MOSFET 500V 11.5A 0.7Ohm N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1


Multiples : 800

Stock Image

FDB12N50FTM_WS
ON Semiconductor

N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

FDB12N50FTM_WS
ON Semiconductor

1 : USD 3.1961
10 : USD 2.2737
25 : USD 2.2003
100 : USD 1.8336
250 : USD 1.6573
500 : USD 1.4222
800 : USD 1.2106
2400 : USD 1.1989
N/A

Obsolete
0 - WHS 3

MOQ : 800
Multiples : 800

Stock Image

FDB12N50FTM_WS
ON Semiconductor

800 : USD 1.0898
N/A

Obsolete
0 - WHS 4

MOQ : 800
Multiples : 800

Stock Image

FDB12N50FTM_WS
ON Semiconductor

800 : USD 0.7985
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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ON Semiconductor Is Now To learn more about onsemi, please visit our website at www.onsemi.com onsemi andand other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba onsemi or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided as-is and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. Typical parameters which may be provided in onsemi data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customers technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and holdo nsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. TM FDB12N50F N-Channel UniFET FRFET MOSFET FDB12N50F TM N-Channel UniFET FRFET MOSFET 500 V, 11.5 A, 700 m Description Features TM UniFET MOSFET is ON Semiconductors high voltage R = 590 m (Typ.) V = 10 V, I = 6 A DS(on) GS D MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to Low Gate Charge (Typ. 21 nC) provide better switching performance and higher avalanche Low C (Typ. 11 pF) rss energy strength. The body diodes reverse recovery perfor- 100% Avalanche Tested mance of UniFET FRFET MOSFET has been enhanced by lifetime control. Its t is less than 100nsec and the reverse dv/dt rr Improve dv/dt Capability immunity is 15V/ns while normal planar MOSFETs have over RoHS Compliant 200nsec and 4.5V/nsec respectively. Therefore, it can remove additional component and improve system reliability in certain Applications applications in which the performance of MOSFETs body diode is significant. This device family is suitable for switching power Lighting converter applications such as power factor correction (PFC), Uninterruptible Power Supply flat panel display (FPD) TV power, ATX and electronic lamp bal- lasts. AC-DC Power Supply D D G G 2 S D -PAK o MOSFET Maximum Ratings T = 25 C unless otherwise noted. C S Symbol Parameter FDB12N50FTM-WS Unit V Drain to Source Voltage 500 V DSS V Gate to Source Voltage 30 V GSS o - Continuous (T = 25 C) 11.5 C I Drain Current A D o - Continuous (T = 100 C) 6.9 C I Drain Current - Pulsed (Note 1) 46 A DM E Single Pulsed Avalanche Energy (Note 2) 456 mJ AS I Avalanche Current (Note 1) 11.5 A AR E Repetitive Avalanche Energy (Note 1) 16.5 mJ AR dv/dt Peak Diode Recovery dv/dt (Note 3) 20 V/ns o (T = 25 C) 165 W C P Power Dissipation D o o - Derate above 25C1.33W/ C o T , T Operating and Storage Temperature Range -55 to +150 C J STG Maximum Lead Temperature for Soldering Purpose, o T 300 C L 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter FQB12N50FTM WS Unit R Thermal Resistance, Junction to Case, Max 0.75 JC o Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient (1 in pad of 2 oz copper), Max. 40 2008 Semiconductor Components Industries, LLC. Publication Order Number: October-2017,Rev.3 FDB12N50F/D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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