EMH2418R-TL-H ON Semiconductor
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Ordering number : ENA2267A EMH2418R N-Channel Power MOSFET EMH2418R Electrical Characteristics at Ta 25 C Value Parameter Symbol Conditions Unit min typ max Drain to Source Breakdown Voltage V( ) I =1mA, V=0V 24 V BR DSS D GS I V =20V, V=0V 1 A Zero-Gate Voltage Drain Current DSS DS GS I V =8V, V=0V 1 A Gate to Source Leakage Current GSS GS DS V(th) V =10V, I=1mA 0.5 1.3V Gate Threshold Voltage GS DS D g V =10V, I=4A 4 S Forward Transconductance FS DS D R (on)1 I =4A, V=4.5V 9.6 12 15m DS D GS R (on)2 I =4A, V=4.0V 10.0 12.5 16.3m DS D GS Static Drain to Source On-State Resistance R (on)3 I =4A, V=3.1V 11.3 14.2 20m DS D GS R (on)4 I =2A, V=2.5V 13.2 16.5 23.1m DS D GS Turn-ON Delay Time t (on) See specified Test Circuit. 120 ns d Rise Time t 170 ns r Turn-OFF Delay Time t(off) 17500 ns d Fall Time t 22600 ns f Total Gate Charge Qg V =10V, V =4.5V, I=9A 4.4 nC DS GS D Gate to Source Charge Qgs 0.9 nC Gate to Drain Miller Charge Qgd 0.7 nC Forward Diode Voltage V I =9A, V=0V 0.8 1.2V SD S GS Switching Time Test Circuit V =10V V DD IN 4.5V 0V I =4A D V IN R =2.5 L D V OUT PW=10 s D.C.1% Rg G EMH2418R P.G 50 S Rg=1k No.A2267-2/6
