Product Information

BBL4001-1E

BBL4001-1E electronic component of ON Semiconductor

Datasheet
MOSFET NCH 4V DRIVE SERIES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

BBL4001-1E
ON Semiconductor

1 : USD 3.0684
10 : USD 2.5012
100 : USD 1.943
250 : USD 1.8913
500 : USD 1.6433
1000 : USD 1.3953
2500 : USD 1.374
N/A

Obsolete
0 - WHS 2

MOQ : 1
Multiples : 1

Stock Image

BBL4001-1E
ON Semiconductor

1 : USD 8.1037
10 : USD 2.7651
50 : USD 2.6719
100 : USD 2.3405
250 : USD 2.2783
350 : USD 1.9262
1050 : USD 1.5948
2800 : USD 1.5535
N/A

Obsolete
0 - WHS 3

MOQ : 350
Multiples : 350

Stock Image

BBL4001-1E
ON Semiconductor

350 : USD 1.3118
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Factory Pack Quantity :
Configuration
Series
Transistor Type
Forward Transconductance - Min
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Ordering number : ENA1356A BBL4001 N-Channel Power MOSFET Coss Crss t (off) d 25C Tc=75C --25C Ciss BBL4001 I -- V I -- V (th) D DS D GS 150 150 Tc=25C V =10V DS 120 120 90 90 60 60 30 30 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Drain to Source Voltage, V -- V IT14161 Gate to Source Voltage, V -- V IT14162 DS GS R (on) -- V R (on) -- Tc DS GS DS 16 14 I =37A Single pulse D Single pulse 14 12 12 10 10 8 8 6 6 4 4 2 2 0 0 05123467 8 910 --50 --25 0 25 50 75 100 125 150 Gate to Source Voltage, V -- V IT14163 Case Temperature, Tc -- C IT14164 GS g -- I I -- V FS D S SD 100 3 2 V =10V V =0V DS GS 7 100 Single pulse 7 5 5 3 2 3 10 7 5 2 3 2 1.0 7 10 5 3 7 2 0.1 5 7 5 3 2 3 0.01 7 2 5 3 2 1.0 0.001 23 5 7 2 357 2 3 5 7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.1 1.0 10 100 Drain Current, I -- A IT14165 Diode Forward Voltage, V -- V IT14166 D SD SW Time -- I Ciss, Coss, Crss -- V D DS 1000 5 f=1MHz V =30V DD 3 7 V =10V GS 2 5 10000 7 3 5 3 2 2 1000 100 7 5 7 t (on) 3 d 5 2 3 100 23 5 7 2 35 7 2 357035 10 15 20 250 0.1 1.0 10 100 Drain to Source Voltage, V -- V Drain Current, I -- A IT14167 IT14168 DS D No. A1356-2/5 V =3V GS t f 4V t r V =10V, I =37A GS D V =4V, I =37A GS D 75C 25C Tc= --25C 6V 25C 8V 10V Tc=75C Tc=75C --25C 75C 25C --25C Tc= --25C 25C Static Drain to Source Switching Time, SW Time -- ns Forward Transconductance, g -- S On-State Resistance, R (on) -- m Drain Current, I -- A FS DS D Static Drain to Source Ciss, Coss, Crss -- pF Source Current, I -- A On-State Resistance, R (on) -- m Drain Current, I -- A S DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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