Product Information

BBS3002-TL-1E

BBS3002-TL-1E electronic component of ON Semiconductor

Datasheet
MOSFET P-CH Pwr MOSFET 60V 100A 5.8mOhm

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

800: USD 2.5274 ea
Line Total: USD 2021.92

0 - Global Stock
MOQ: 800  Multiples: 800
Pack Size: 800
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 800
Multiples : 800

Stock Image

BBS3002-TL-1E
ON Semiconductor

800 : USD 2.5274

0 - WHS 2


Ships to you between Tue. 14 May to Mon. 20 May

MOQ : 800
Multiples : 800

Stock Image

BBS3002-TL-1E
ON Semiconductor

800 : USD 3.6681

0 - WHS 3


Ships to you between
Tue. 21 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

BBS3002-TL-1E
ON Semiconductor

1 : USD 7.6125
10 : USD 6.3272
30 : USD 5.3971
100 : USD 4.6279
500 : USD 4.4964
1000 : USD 4.4331

0 - WHS 4


Ships to you between Mon. 20 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

BBS3002-TL-1E
ON Semiconductor

1 : USD 6.5218
10 : USD 4.215
25 : USD 4.0493
100 : USD 3.925
250 : USD 3.8111
500 : USD 3.0137
800 : USD 2.6304
2400 : USD 2.5476

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Series
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif

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Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET Coss Crss t (off) d Tc=75C --25C Ciss 25C t f BBS3002 I -- V I -- V D DS D GS --200 --200 Tc=25C V = --10V DS --180 --180 --140 --140 --160 --160 --120 --120 --100 --100 --80 --80 --60 --60 --40 --40 V = --3V GS --20 --20 0 00 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 Drain to Source Voltage, V -- V IT14173 Gate to Source Voltage, V -- V IT14174 DS GS R (on) -- V R (on) -- Tc DS GS DS 20 12 I = --50A Single pulse D 18 Single pulse 10 16 14 8 12 10 6 8 4 6 4 2 2 0 0 --2 --3 --4 --5 --6 --7 --8 --9 --10 --50 --25 0 25 50 75 100 125 150 Gate to Source Voltage, V -- V IT14175 Case Temperature, Tc -- C IT14176 GS yfs -- I I -- V D S SD --1K 3 7 V = --10V V =0V 5 DS GS 2 3 Single pulse 2 --100 100 7 5 7 3 2 5 --10 7 3 5 3 2 2 --1.0 7 5 10 3 2 7 --0.1 5 7 5 3 3 2 --0.01 2 7 5 3 1.0 2 7 --0.001 23 5 7 2 357 23 57 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --0.1 --1.0 --10 --100 Drain Current, I -- A IT14177 Diode Forward Voltage, V -- V IT17199 D SD SW Time -- I Ciss, Coss, Crss -- V D DS 5 3 V = --30V f=1MHz DD 2 V = --10V 3 GS 2 10000 1000 7 7 5 5 3 3 2 2 1000 100 t (on) d 7 7 5 5 23 5 7 2 357 23 57 0 --5 --10 --15 --20 --25 --30 --0.1 --1.0 --10 --100 Drain to Source Voltage, V -- V Drain Current, I -- A IT14179 IT14180 DS D No. A1357-2/6 --4V V = --10V, I = --50A GS D t r V = --4V, I = --50A GS D 25C 75C Tc= --25C --6V --8V --10V 25C --25C Tc=75C 25C Tc=75C --25C 25C 75C Tc= --25C Static Drain to Source Switching Time, SW Time -- ns Forward Transfer Admittance, yfs -- S On-State Resistance, R (on) -- m Drain Current, I -- A DS D Static Drain to Source Ciss, Coss, Crss -- pF Source Current, I -- A On-State Resistance, R (on) -- m Drain Current, I -- A S DS D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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