Product Information

BAS116TT1G

BAS116TT1G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Diodes - General Purpose, Power, Switching SS SC75 SWCH DIO 75V TR

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

348: USD 0.0295 ea
Line Total: USD 10.27

8730 - Global Stock
Ships to you between
Thu. 23 May to Wed. 29 May
MOQ: 348  Multiples: 1
Pack Size: 1
Availability Price Quantity
8730 - WHS 1


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BAS116TT1G
ON Semiconductor

1 : USD 0.0465
10 : USD 0.0322
100 : USD 0.0295
1000 : USD 0.0246
3000 : USD 0.024
9000 : USD 0.024
48000 : USD 0.024

2230 - WHS 2


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

BAS116TT1G
ON Semiconductor

1 : USD 0.2425
10 : USD 0.2421
25 : USD 0.2415
100 : USD 0.2411
250 : USD 0.2363
500 : USD 0.2363
1000 : USD 0.2363

8730 - WHS 3


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 348
Multiples : 1

Stock Image

BAS116TT1G
ON Semiconductor

348 : USD 0.0295
1000 : USD 0.0246
3000 : USD 0.024

2230 - WHS 4


Ships to you between Thu. 23 May to Wed. 29 May

MOQ : 286
Multiples : 1

Stock Image

BAS116TT1G
ON Semiconductor

286 : USD 0.2363

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Pd - Power Dissipation
Operating Temperature Range
Brand
Maximum Diode Capacitance
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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BAS116TT1G Switching Diode Features Low Leakage Current Applications Medium Speed Switching Times BAS116TT1G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Breakdown Voltage (I = 100 Adc) V 75 Vdc BR (BR) Reverse Voltage Leakage Current (V = 75 Vdc) I 5.0 nAdc R R Reverse Voltage Leakage Current (V = 75 Vdc, T = 150C) 80 R J Forward Voltage (I = 1.0 mAdc) V 900 mV F F Forward Voltage (I = 10 mAdc) 1000 F Forward Voltage (I = 50 mAdc) 1100 F Forward Voltage (I = 150 mAdc) 1250 F Diode Capacitance (V = 0 V, f = 1.0 MHz) C 2.0 pF R D Reverse Recovery Time (I = I = 10 mAdc) (Figure 1) t 3.0 s F R rr 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% DUT i = 1.0 mA R(REC) 50 Output 50 INPUT I R Pulse SAMPLING V R OUTPUT PULSE Generator OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit TYPICAL CHARACTERISTICS 1,000 1.2 T = 25C A 1.0 100 0.8 150C 25C 55C 10 0.6 0.4 1 0.2 0.1 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 10 20 30 40 50 60 70 80 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 2. Forward Voltage Figure 3. Capacitance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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