Product Information

BAS16LT3G

BAS16LT3G electronic component of ON Semiconductor

Datasheet
Diodes - General Purpose, Power, Switching 75V 200mA
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.0198 ea
Line Total: USD 0.02

6169 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

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BAS16LT3G
ON Semiconductor

1 : USD 0.0198
10 : USD 0.0173
100 : USD 0.0134
1000 : USD 0.0131
2500 : USD 0.0122
10000 : USD 0.0101
20000 : USD 0.0099
50000 : USD 0.0099
100000 : USD 0.0099

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BAS16LT3G
ON Semiconductor

1 : USD 0.1221
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25 : USD 0.1217
100 : USD 0.1214
250 : USD 0.1189
500 : USD 0.1189
1000 : USD 0.1189

881 - WHS 3


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BAS16LT3G
ON Semiconductor

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BAS16LT3G
ON Semiconductor

20 : USD 0.0301
200 : USD 0.0235
600 : USD 0.02
2000 : USD 0.0183
10000 : USD 0.0162

1378 - WHS 5


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MOQ : 676
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BAS16LT3G
ON Semiconductor

676 : USD 0.1189

6169 - WHS 6


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MOQ : 758
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BAS16LT3G
ON Semiconductor

758 : USD 0.0134
1000 : USD 0.0131
2500 : USD 0.0122
10000 : USD 0.0101
20000 : USD 0.0099

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Category
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Additional Infomation About Product

Switching Diode BAS16L Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable www.onsemi.com These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant 3 1 MAXIMUM RATINGS CATHODE ANODE Rating Symbol Value Unit Continuous Reverse Voltage V 100 V R Peak Forward Current I 200 mA F 3 MARKING NonRepetitive Peak Forward Surge I 1.8 A FSM(surge) DIAGRAM Current 60 Hz 1 Repetitive Peak Forward Current I 1.0 A 2 FRM (Note 3) A6 M SOT23 CASE 318 NonRepetitive Peak Forward Current I A FSM (Square Wave, T = 25C prior to STYLE 8 1 J surge) t = 1 s 36.0 t = 10 s 18.0 A6 = Specific Device Code t = 100 s 6.0 M = Date Code* 3.0 t = 1 ms = PbFree Package 1.8 t = 10 ms 1.3 (Note: Microdot may be in either location) t = 100 ms t = 1 s 1.0 *Date Code orientation and/or overbar may vary depending upon manufacturing location. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS ORDERING INFORMATION Characteristic Symbol Max Unit Device Package Shipping Total Device Dissipation FR5 Board P D BAS16LT1G SOT23 3000/Tape & Reel (Note 1) 225 mW (PbFree) T = 25C A Derate above 25C 1.8 mW/C BAS16LT3G SOT23 10000/Tape & Reel (PbFree) Thermal Resistance, JunctiontoAmbient R 556 C/W JA SBAS16LT1G SOT23 3000/Tape & Reel (PbFree) Total Device Dissipation P D Alumina Substrate, (Note 2) 300 mW SBAS16LT3G SOT23 10000/Tape & Reel T = 25C A (PbFree) Derate above 25C 2.4 mW/C For information on tape and reel specifications, Thermal Resistance, including part orientation and tape sizes, please JunctiontoAmbient R 417 C/W JA refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Junction and Storage Temperature T , T 55 to +150 C J stg 1. FR5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Square Wave, f = 40 kHz, PW = 200 ns Test Duration = 60 s, T = 25C prior to surge. J Semiconductor Components Industries, LLC, 1994 1 Publication Order Number: February, 2020 Rev. 14 BAS16LT1/DBAS16L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Reverse Voltage Leakage Current I Adc R (V = 100 V) 1.0 R (V = 75 Vdc, T = 150C) 50 R J (V = 25 Vdc, T = 150C) 30 R J Reverse Breakdown Voltage V 100 Vdc (BR) (I = 100 Adc) BR Forward Voltage V mV F (I = 1.0 mAdc) 715 F (I = 10 mAdc) 855 F (I = 50 mAdc) 1000 F (I = 150 mAdc) 1250 F Diode Capacitance C 2.0 pF D (V = 0, f = 1.0 MHz) R Forward Recovery Voltage V 1.75 Vdc FR (I = 10 mAdc, t = 20 ns) F r Reverse Recovery Time t 6.0 ns rr (I = I = 10 mAdc, R = 50 ) F R L Stored Charge Q 45 pC S (I = 10 mAdc to V = 5.0 Vdc, R = 500 ) F R L Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. i = 1.0 mA R(REC) 50 OUTPUT 50 INPUT I R PULSE SAMPLING V R OUTPUT PULSE GENERATOR OSCILLOSCOPE INPUT SIGNAL (I = I = 10 mA MEASURED F R at i = 1.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit www.onsemi.com 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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