Product Information

2SK3747-1E

2SK3747-1E electronic component of ON Semiconductor

Datasheet
MOSFET NCH 10V DRIVE SERIES

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4: USD 1.9912 ea
Line Total: USD 7.96

0 - Global Stock
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1

Stock Image

2SK3747-1E
ON Semiconductor

1 : USD 6.5998
10 : USD 6.0524
25 : USD 5.7496
50 : USD 5.6346
100 : USD 5.4179
500 : USD 5.4179

0 - WHS 2


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 30
Multiples : 30

Stock Image

2SK3747-1E
ON Semiconductor

30 : USD 4.5592
90 : USD 4.3769
150 : USD 4.3769
450 : USD 4.3769
750 : USD 4.3769

0 - WHS 3


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 210
Multiples : 210

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2SK3747-1E
ON Semiconductor

210 : USD 2.4362

0 - WHS 4


Ships to you between Wed. 22 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

2SK3747-1E
ON Semiconductor

1 : USD 5.9224
10 : USD 3.9193
25 : USD 3.7501
100 : USD 3.3025
500 : USD 2.845

0 - WHS 5


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 4
Multiples : 1

Stock Image

2SK3747-1E
ON Semiconductor

4 : USD 1.9912
100 : USD 1.9513

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Mounting Style
Package / Case
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
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Ordering number : EN7767B 2SK3747 N-Channel Power MOSFET 2SK3747 Electrical Characteristics at Ta=25C Ratings Parameter Symbol Conditions Unit min typ max Drain-to-Source Breakdown Voltage V I =1mA, V =0V 1500 V (BR)DSS D GS Zero-Gate Voltage Drain Current I V =1200V, V =0V 100 A DSS DS GS Gate-to-Source Leakage Current I V =16V, V =0V 10 A GSS GS DS Cutoff Voltage V (off) V =10V, I =1mA 2.5 3.5 V GS DS D Forward Transfer Admittance yfs V =20V, I =1A 0.7 1.4 S DS D Static Drain-to-Source On-State Resistance R (on) I =1A, V =10V 10 13 DS D GS Input Capacitance Ciss 380 pF Output Capacitance Coss V =30V, f=1MHz 70 pF DS Reverse Transfer Capacitance Crss 40 pF Turn-ON Delay Time t (on) 12 ns d Rise Time t 37 ns r See Fig.2 Turn-OFF Delay Time t (off) 152 ns d Fall Time t 59 ns f Total Gate Charge Qg 37.5 nC Gate-to-Source Charge Qgs V =200V, V =10V, I =2A 2.7 nC DS GS D Gate-to-Drain Miller Charge Qgd 20 nC Diode Forward Voltage V I =2A, V =0V 0.88 1.2 V SD S GS Fig.1 Avalanche Resistance Test Circuit Fig.2 Switching Time Test Circuit V V =200V IN DD L 10V 50 0V I =1A D V IN R =200 L 2SK3747 D V 10V OUT V 50 DD PW=10 s 0V D.C.0.5% G 2SK3747 P.G S R =50 GS Ordering Information Device Package Shipping memo 2SK3747-1E TO-3PF-3L 30pcs./magazine Pb Free No.7767-2/7

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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