DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D102 PRF947 UHF wideband transistor Product specication 1999 Jul 23 Supersedes data of 1999 Mar 01Philips Semiconductors Product specication UHF wideband transistor PRF947 FEATURES PINNING Small size PIN DESCRIPTION Low noise 1 base Low distortion 2 emitter High gain 3 collector Gold metallization ensures excellent reliability. 3 handbook, halfpage APPLICATIONS 3 Communication and instrumentation systems. 1 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT323 2 1 2 package. The transistor is primarily intended for wideband applications in the GHz-range in the RF front end of analog Top view MAM062 and digital cellular telephones, cordless phones, radar detectors, pagers and satellite TV-tuners. Marking code: V0. Fig.1 Simplified outline (SOT323) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C feedback capacitance I = 0 V =6V f=1MHz - 0.3 - pF re C CB f transition frequency I = 15 mA V =6V f = 1 GHz - 8.5 - GHz T C CE m G maximum unilateral power gain I = 15 mA V =6V - 16 - dB UM C CE T =25 C f = 1 GHz amb NF noise gure = I = 5 mA V =6V - 1.5 - dB S opt C CE f = 1 GHz P total power dissipation T =60 C note 1 -- 250 mW tot s R thermal resistance from junction P = 250 mW -- 460 K/W th j-s tot to soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 1999 Jul 23 2