Product Information

PRF949,115

PRF949,115 electronic component of NXP

Datasheet
RF Bipolar Transistors NPN 10V 9GHZ

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.1069 ea
Line Total: USD 0.11

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 1
Multiples : 1
1 : USD 0.1069
5 : USD 0.1067
50 : USD 0.1042
500 : USD 0.0977
2500 : USD 0.095

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Transistor Polarity
Operating Frequency
DC Collector/Base Gain hFE Min
Collector- Emitter Voltage VCEO Max
Emitter- Base Voltage VEBO
Continuous Collector Current
Pd - Power Dissipation
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Brand
Maximum Dc Collector Current
Factory Pack Quantity :
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DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PRF949 UHF wideband transistor Product specication 2000 Apr 03 Supersedes data of 1999 Nov 02Philips Semiconductors Product specication UHF wideband transistor PRF949 FEATURES PINNING SOT416 (SC-75) Small size PIN DESCRIPTION Low noise 1 base Low distortion 2 emitter High gain 3 collector Gold metallization ensures excellent reliability. APPLICATIONS 3 handbook, halfpage Communication and instrumentation systems. DESCRIPTION 12 Top view MBK090 Silicon NPN transistor in a surface mount 3-pin SOT416 (SC-75) package. The transistor is primarily intended for Marking code: V0. wideband applications in the GHz range in the RF front end of analog and digital cellular telephones, cordless Fig.1 Simplified outline (SOT416). phones, radar detectors, pagers and satellite TV-tuners. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT C feedback capacitance I = 0 V =6V f=1MHz - 0.3 - pF re C CB f transition frequency I = 15 mA V =6V f = 1 GHz 7 9 - GHz T C CE m G maximum unilateral power gain I = 15 mA V =6V - 16 - dB UM C CE T =25 C f = 1 GHz amb NF noise gure = I = 5 mA V =6V - 1.5 2.5 dB S opt C CE f = 1 GHz P total power dissipation T =75 C note 1 -- 150 mW tot s R thermal resistance from junction -- 500 K/W th j-s to soldering point Note 1. T is the temperature at the soldering point of the collector pin. s 2000 Apr 03 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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