Product Information

PMBFJ308,215

PMBFJ308,215 electronic component of NXP

Datasheet
Transistors RF JFET TAPE7 FET-RFSS

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - Warehouse 1

MOQ : 1
Multiples : 1
1 : USD 0.7793
10 : USD 0.6265
100 : USD 0.1647
1000 : USD 0.1491
3000 : USD 0.1336
9000 : USD 0.1326
24000 : USD 0.1284
45000 : USD 0.1253
99000 : USD 0.1232
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Configuration
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Maximum Operating Temperature
Series
Product
Type
Brand
Drain-Source Current At Vgs 0
Gate-Source Cutoff Voltage
Rds On
Maximum Drain Gate Voltage
Factory Pack Quantity :
Height
Length
Width
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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PMBFJ308 PMBFJ309 PMBFJ310 N-channel silicon field-effect transistors Rev. 4 20 September 2011 Product data sheet 1. Product profile 1.1 General description Symmetrical N-channel silicon junction field-effect transistors in a SOT23 package. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Low noise Interchangeability of drain and source connections High gain. 1.3 Applications AM input stage in car radios VHF amplifiers Oscillators and mixers. 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage - - 25 V DS V gate-source cut-off voltage GSoff PMBFJ308 V =10V I =1 A 1- 6.5 V DS D PMBFJ309 V =10V I =1 A 1- 4V DS D PMBFJ310 V =10V I =1 A 2- 6.5 V DS D SOT23PMBFJ308 PMBFJ309 PMBFJ310 NXP Semiconductors N-channel silicon field-effect transistors Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit I drain current DSS PMBFJ308 V =0V V =10V 12 - 60 mA GS DS PMBFJ309 V =0V V =10V 12 - 30 mA GS DS PMBFJ310 V =0V V =10V 24 - 60 mA GS DS P total power dissipation up to T =25 C --250mW tot amb y forward transfer admittance V =10V I=10mA 10 --mS fs DS D 2. Pinning information 1 Table 2. Discrete pinning Pin Description Simplified outline Symbol 1source 3 2 2drain 3 1 sym060 3gate 12 1 Drain and source are interchangeable. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMBFJ308 - plastic surface mounted package 3 leads SOT23 PMBFJ309 PMBFJ310 4. Marking Table 4. Marking 1 Type number Marking code PMBFJ308 48* PMBFJ309 49* PMBFJ310 50* 1 * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. PMBFJ308 309 310 All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 4 20 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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