Product Information

CGHV40030F

CGHV40030F electronic component of Wolfspeed

Datasheet
RF JFET Transistors DC-6GHz 30W GaN Gain 16dB typ.

Manufacturer: Wolfspeed
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 167.2776 ea
Line Total: USD 167.2776

80 - Global Stock
Ships to you between
Thu. 11 Apr to Mon. 15 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
33 - Global Stock


Ships to you between Thu. 11 Apr to Mon. 15 Apr

MOQ : 1
Multiples : 1

Stock Image

CGHV40030F
Wolfspeed

1 : USD 156.63
10 : USD 152.674
25 : USD 152.674
50 : USD 152.674
100 : USD 150.834
250 : USD 150.8225

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Type
Technology
Operating Frequency
Gain
Transistor Polarity
Vds - Drain-Source Breakdown Voltage
Vgs - Gate-Source Breakdown Voltage
Id - Continuous Drain Current
Output Power
Maximum Drain Gate Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Application
Configuration
Height
Length
Operating Temperature Range
Product
Type
Width
Brand
Forward Transconductance - Min
Gate-Source Cutoff Voltage
Class
Development Kit
Fall Time
Nf - Noise Figure
P1db - Compression Point
Rds On - Drain-Source Resistance
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Vgs Th - Gate-Source Threshold Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Package Type: 440166 and 440196 PN: CGHV40030 CGHV40030 30 W, DC - 6 GHz, 50V, GaN HEMT Crees CGHV40030 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high gain and wide bandwidth capabilities. The device can be deployed for L, S and C-Band amplifier applications. The datasheet specifications are based on a 0.96 - 1.4 GHz amplifier. The CGHV40030 operates on a 50 volt rail circuit while housed in a 2-lead flange or pill package. Typical Performance 0.96 - 1.4 GHz (T = 25C) , 50 V C Parameter 0.96 GHz 1.1 GHz 1.25 GHz 1.4 GHz Units Gain @ P 15.6 15.8 16.6 15.8 dB SAT Saturated Output Power 29 30 36 31 W Drain Efficiency @ P 62 74 64 67 % SAT Note: Measured CW in the CGHV40030-AMP application circuit. Features Up to 6 GHz Operation 30 W Typical Output Power 16 dB Gain Application circuit for 0.96 - 1.4 GHz 70% Efficiency at P SAT 50 V Operation Subject to change without notice. 1 www.cree.com/rf Rev 1.1 - December 2016Absolute Maximum Ratings (not simultaneous) at 25C Case Temperature Parameter Symbol Rating Units Notes Drain-Source Voltage V 125 Volts 25C DSS Gate-to-Source Voltage V -10, +2 Volts 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 5.2 mA 25C GMAX 1 Maximum Drain Current I 4.2 A 25C DMAX 2 Soldering Temperature T 245 C S 3 Case Operating Temperature T -40, +85 C C 4 Thermal Resistance, Junction to Case R 5.9 C/W 85C JC Note: 1 Current limit for long term, reliable operation 2 Refer to the Application Note on soldering at www.cree.com/rf/document-library 3 P = 23.4 W DISS 4 CW Electrical Characteristics (T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions 1 DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 5.2 mA GS(th) DC DS D Gate Quiescent Voltage V -2.6 V V = 50 V, I = 150 mA GS(Q) DC DS D 2 Saturated Drain Current I 3.9 5.2 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 125 V V = -8 V, I = 5.2 mA (BR)DSS DC GS D 3 RF Characteristics (T = 25C, F = 1.2 GHz unless otherwise noted) C 0 4 Power Gain G 15 16 - dB V = 50 V, I = 150 mA, P = P P DD DQ OUT SAT 4 Output Power P 30 35 W V = 50 V, I = 150 mA, P = P OUT DD DQ OUT SAT 4 Drain Efficiency 62 65 - % V = 50 V, I = 150 mA, P = P DD DQ OUT SAT No damage at all phase angles, 4 Output Mismatch Stress VSWR - - 10 : 1 Y V = 50 V, I = 150 mA, P = 30 W CW DD DQ OUT Dynamic Characteristics 5 Input Capacitance C 7.4 pF V = 50 V, V = -8 V, f = 1 MHz GS DS gs 5 Output Capacitance C 2 pF V = 50 V, V = -8 V, f = 1 MHz DS DS gs Feedback Capacitance C 0.15 pF V = 50 V, V = -8 V, f = 1 MHz GD DS gs Notes: 1 Measured on wafer prior to packaging 2 Scaled from PCM data 3 Measured in CGHV40030-AMP 4 P is defined as I = 0.52 mA SAT G 5 Includes package Cree, Inc. 4600 Silicon Drive Copyright 2014-2016 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 registered trademarks of Cree, Inc. Fax: +1.919.869.2733 www.cree.com/rf 2 CGHV40030 Rev 1.1

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
Wolfspeed
Wolfspeed / Cree
Wolfspeed(CREE)

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