Product Information

PESD5V0V1BLD

PESD5V0V1BLD electronic component of NXP

Datasheet
DIODE, ESD, LOW CAPACITANCE, SOD882
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3655 ea
Line Total: USD 1.83

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 5
Multiples : 1
5 : USD 0.3655
100 : USD 0.1913
1000 : USD 0.1437
2500 : USD 0.123
10000 : USD 0.1159
20000 : USD 0.1056

Read More Specifications

     
Manufacturer
Product Category
Packaging
Operating Voltage
Power Dissipation Pd
Clamping Voltage Vc Max
Diode Case Style
No Of Pins
Svhc
Diode Type
Msl
LoadingGif

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Additional Infomation About Product

PESD5V0V1BLD Very low capacitance bidirectional ESD protection diode Rev. 1 7 December 2010 Product data sheet 1. Product profile 1.1 General description Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to protect one signal line from the damage caused by ESD and other transients. The device is housed in a SOD882D leadless ultra small Surface-Mounted Device (SMD) plastic package with visible and solderable side pads. 1.2 Features and benefits Bidirectional ESD protection of one line Low clamping voltage: V =12.5V CL Ultra small SMD plastic package Ultra low leakage current: I <1nA RM Solderable side pads ESD protection up to 30 kV Package height typ. 0.37 mm IEC 61000-4-2 level 4 (ESD) Very low diode capacitance: C =11pF IEC 61000-4-5 (surge) I =4.8 A d PP Max. peak pulse power: P =45W AEC-Q101 qualified PP 1.3 Applications Computers and peripherals Communication systems Audio and video equipment Portable electronics Cellular handsets and accessories 10/100 Mbit/s Ethernet Subscriber Identity Module (SIM) card FireWire protection 1.4 Quick reference data Table 1. Quick reference data T =25 C unless otherwise specified. amb Symbol Parameter Conditions Min Typ Max Unit V reverse standoff voltage - - 5 V RWM C diode capacitance f = 1 MHz V =0V - 11 13 pF d RPESD5V0V1BLD NXP Semiconductors Very low capacitance bidirectional ESD protection diode 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol 1 1 cathode 1 12 2 cathode 2 1 2 006aab041 Transparent top view 1 The marking bar indicates pin 1. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0V1BLD - leadless ultra small plastic package 2 terminals SOD882D body 1 0.6 0.4 mm 4. Marking Table 4. Marking codes 1 Type number Marking code PESD5V0V1BLD 0111 0000 1 For SOD882D binary marking code description, see Figure 1. 4.1 Binary marking code description CATHODE BAR READING DIRECTION VENDOR CODE READING EXAMPLE: 0111 1011 MARKING CODE (EXAMPLE) READING DIRECTION 006aac477 Fig 1. SOD882D binary marking code description PESD5V0V1BLD All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 1 7 December 2010 2 of 14

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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