Product Information

PESD5V0V2BM

PESD5V0V2BM electronic component of Nexperia

Datasheet
DIODE, AEC-Q101, ESD PROTECTION, SOD-883
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.3813 ea
Line Total: USD 1.91

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 5
Multiples : 1

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PESD5V0V2BM
Nexperia

5 : USD 0.3813
100 : USD 0.2081
500 : USD 0.1376
1000 : USD 0.1058
2000 : USD 0.092
5000 : USD 0.0825

Read More Specifications

     
Manufacturer
Product Category
Packaging
Operating Voltage
Clamping Voltage Vc Max
Diode Case Style
No Of Pins
Power Dissipation Pd
Product Range
Svhc
Msl
LoadingGif

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Additional Infomation About Product

PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 14 August 2015 Product data sheet 1. General description Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from damage caused by ESD and other transients. The device is housed in a DFN1006-3 (SOT883) leadless ultra small Surface-Mounted Device (SMD) plastic package. 2. Features and benefits Bidirectional ESD protection of two lines Ultra small SMD plastic package ESD protection up to 30 kV IEC 61000-4-2 I = 9 A IEC 61000-4-5 (surge) PPM Ultra low leakage current: I = 1 nA RM AEC-Q101 qualified 3. Applications Computers and peripherals Audio and video equipment Cellular handsets and accessories Communication systems Portable electronics 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V reverse standoff T = 25 C - - 5 V RWM amb voltage C diode capacitance f = 1 MHz V = 0 V T = 25 C - 18 20 pF d R amb Scan or click this QR code to view the latest information for this product SOT883NXP Semiconductors PESD5V0V2BM Very low capacitance bidirectional ESD protection diodes 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K1 cathode 1 1 3 3 2 K2 cathode 2 2 Transparent 3 K3 common cathode top view 006aab331 DFN1006-3 (SOT883) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PESD5V0V2BM DFN1006-3 DFN1006-3: leadless ultra small plastic package 3 SOT883 solder lands 7. Marking Table 4. Marking codes Type number Marking code PESD5V0V2BM M2 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit I rated peak pulse current t = 8/20 s 1 2 - 9 A PPM p T junction temperature - 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg ESD maximum ratings V electrostatic discharge voltage IEC 61000-4-2 contact discharge 1 3 - 30 kV ESD IEC 61000-4-2 air discharge 1 3 - 30 kV MIL-STD-883 human body model 1 - 10 kV 1 Measured from pin 1 or 2 to pin 3. 2 According to IEC 61000-4-5 and IEC 61643-321. 3 Device stressed with ten non-repetitive ESD pulses. PESD5V0V2BM All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2015. All rights reserved Product data sheet 14 August 2015 2 / 12

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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