DocumentNumber:MHT1008N FreescaleSemiconductor Rev. 0, 5/2016 TechnicalData RFPowerLDMOSTransistor N--Channel Enhancement--ModeLateral MOSFET MHT1008N This 12.5W CW highefficiency RF power transistor is designed for consumer andcommercial cookingapplications operatinginthe2450MHz ISM band. TypicalPerformance: V =28Vdc,I =110mA DD DQ 2450MHz,12.5WCW,28V Frequency G PAE P ps out RFPOWERLDMOSTRANSISTOR (MHz) SignalType (dB) (%) (W) FORCONSUMERAND COMMERCIALCOOKING 2400 CW 18.5 57.5 12.5 2450 18.6 56.3 12.5 2500 18.3 55.6 12.5 LoadMismatch/Ruggedness Frequency P Test in SignalType VSWR (MHz) (dBm) Voltage Result PLD--1.5W PLASTIC 2450 CW >5:1 26 32 NoDevice atallPhase (3 dB Degradation Angles Overdrive) Features Characterizedwithseries equivalent large--signal impedanceparameters and Gate Drain commonsourceS--parameters Qualifiedfor operationat 32Vdc IntegratedESD protection (Top View) 150C caseoperatingtemperature Note: Thecenterpadonthebacksideofthe 150C dietemperaturecapability packageisthesourceterminalforthe transistor. TargetApplications Figure1.PinConnections Consumer cookingas PA driver Commercialcookingas PA driver FreescaleSemiconductor, Inc., 2016. All rights reserved. MHT1008N RF DeviceData FreescaleSemiconductor, Inc. 1Table1.MaximumRatings Rating Symbol Value Unit Drain--Source Voltage V 0.5,+65 Vdc DSS Gate--SourceVoltage V 6.0,+10 Vdc GS Operating Voltage V 32,+0 Vdc DD StorageTemperatureRange T 65to+150 C stg CaseOperatingTemperatureRange T 40to+150 C C (1,2) OperatingJunctionTemperatureRange T 40to+150 C J TotalDeviceDissipation T =25 C P 48.1 W C D Derateabove25 C 0.38 W/ C Table2.ThermalCharacteristics (2,3) Characteristic Symbol Value Unit ThermalResistance,JunctiontoCase R 2.6 C/W JC CaseTemperature88C,12.5W CW,28Vdc,I =110mA,2450MHz DQ Table3.ESDProtectionCharacteristics TestMethodology Class HumanBody Model(perJESD22--A114) 1B,passes 500V MachineModel(perEIA/JESD22--A115) A,passes 50V ChargeDeviceModel(perJESD22--C101) IV,passes 2000V Table4.MoistureSensitivityLevel(MSL) TestMethodology Rating PackagePeakTemperature Unit PerJESD22--A113,IPC/JEDECJ--STD--020 3 260 C Table5.ElectricalCharacteristics (T =25 Cunless otherwisenoted) A Characteristic Symbol Min Typ Max Unit OffCharacteristics Zero Gate Voltage Drain Leakage Current I 10 Adc DSS (V =65Vdc,V =0Vdc) DS GS Zero Gate Voltage Drain Leakage Current I 1 Adc DSS (V =32Vdc,V =0Vdc) DS GS Gate--SourceLeakageCurrent I 1 Adc GSS (V =5Vdc,V =0Vdc) GS DS OnCharacteristics GateThresholdVoltage V 0.8 1.2 1.6 Vdc GS(th) (V =10Vdc,I =15.4 Adc) DS D GateQuiescentVoltage V 1.8 Vdc GS(Q) (V =28Vdc,I =90mAdc) DS D Drain--SourceOn--Voltage V 0.1 0.2 0.3 Vdc DS(on) (V =10Vdc,I =154mAdc) GS D 1. Continuous useat maximum temperaturewillaffect MTTF. 2. MTTFcalculatoravailable at