Product Information

BYW29E-200

BYW29E-200 electronic component of NXP

Datasheet
DIODE, ULTRAFAST, 8A
Small-signal diode with high-speed switching and low leakage current.

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.9198 ea
Line Total: USD 4.6

0 - Global Stock
MOQ: 5  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 16 May to Wed. 22 May

MOQ : 1
Multiples : 1
1 : USD 1.2413
10 : USD 0.9975
100 : USD 0.7653
500 : USD 0.6286
1000 : USD 0.4903
5000 : USD 0.4606

     
Manufacturer
Product Category
Brand
Repetitive Reverse Voltage Vrrm Max
Forward Current Ifav
Diode Configuration
Forward Voltage Vf Max
Reverse Recovery Time Trr Max
Forward Surge Current Ifsm Max
Operating Temperature Max
Diode Case Style
No. Of Pins
Product Range
Svhc
Current If @ Vf
Current Ifsm
Current Ir Max
Diode Type
Junction Temperature Tj Max
Pin Configuration
Reverse Recovery Time Trr Typ
Termination Type
LoadingGif

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The BYW29E-200 is an Electronic Grade Schottky rectifier manufactured by NXP Semiconductors. It is a 200V ultra-fast recovery dual diode designed to deliver improved junction temperatures and low power losses in a very small package. The device features a maximum peak forward current of 5A, reverse recovery time of 30ns, forward voltage drop of 0.6V, reverse leakage current of 10uA, and reverse voltage of 200V. Additionally, it is capable of withstanding temperatures up to 150°C and can be used in a variety of applications, such as in power bridges, active current limit circuits, converters, supplies, and other rectifier circuits.

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