Product Information

BZA418A,165

BZA418A,165 electronic component of NXP

Datasheet
TVS Diode Arrays DIODE ARRAY TAPE-11
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10000: USD 0.0784 ea
Line Total: USD 784

0 - Global Stock
MOQ: 10000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Fri. 31 May

MOQ : 10000
Multiples : 1
10000 : USD 0.0784

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Polarity
Termination Style
Clamping Voltage
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Peak Surge Current
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
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Additional Infomation About Product

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D302 BZA418A Quadruple ESD transient voltage suppressor Product data sheet 2002 Sep 02NXP Semiconductors Product data sheet Quadruple ESD transient voltage BZA418A suppressor FEATURES PINNING ESD rating >8 kV, according to IEC1000-4-2 PIN DESCRIPTION SOT457 surface mount package 1 cathode 1 Common anode configuration 2 common Non-clamping range 0.5 to 18 V 3 cathode 2 Maximum reverse peak power dissipation: 4 cathode 3 19.6 W at t = 1 ms p 5 common Maximum clamping voltage at peak pulse current: 6 cathode 4 27 V at I = 0.7 A. ZSM APPLICATIONS handbook, halfpage 6 5 4 Computers and peripherals 1 Audio and video equipment 3 2 Communication systems 4 5 Medical equipment. 6 132 Top view MAM357 DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient Marking code: L1. suppression at 18 V level. Fig.1 Simplified outline (SOT457) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Per diode I working current T = 60 C note 1 note 2 mA Z s I continuous forward current T = 60 C 100 mA F s I non-repetitive peak forward t = 1 ms square pulse 3.75 A FSM p current I non-repetitive peak reverse t = 1 ms square pulse see Fig.2 0.7 A ZSM p current P total power dissipation T = 60 C see Fig.3 720 mW tot s P non repetitive peak reverse power square pulse t = 1 ms see Fig.4 19.6 W ZSM p dissipation T storage temperature 65 +150 C stg T junction temperature 65 +150 C j Notes 1. T is the temperature at the soldering point of the anode pin. s 2. DC working current limited by P . tot max 2002 Sep 02 2

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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