Product Information

BUK9E4R4-40B

BUK9E4R4-40B electronic component of NXP

Datasheet
Trans MOSFET N-CH 40V 174A Automotive 3-Pin(3+Tab) I2PAK
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 4.8949 ea
Line Total: USD 34.26

0 - Global Stock
MOQ: 7  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

BUK9E4R4-40B N-channel TrenchMOS logic level FET Rev. 03 8 February 2011 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits AEC Q101 compliant Suitable for logic level gate drive sources Low conduction losses due to low on-state resistance Suitable for thermally demanding environments due to 175 C rating 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source T 25 C T 175C --40 V V DS j j voltage 1 I drain current V =5V T =25C --75 A D GS mb see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 --254W tot mb dissipation Static characteristics drain-source V =10V I =25A -3.6 4 m R DSon GS D on-state T =25C j resistance V =5V I =25A -3.9 4.4 m GS D T =25C see Figure 11 j see Figure 12 I2PAKBUK9E4R4-40B NXP Semiconductors N-channel TrenchMOS logic level FET Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive I =75A V 40 V --961mJ DS(AL)S D sup drain-source R =50 V =5V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge V =5V I =25A -24 -nC GD GS D V =32 V T =25C DS j see Figure 13 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9E4R4-40B I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 BUK9E4R4-40B All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 03 8 February 2011 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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