Product Information

BUK9E3R2-40B,127

BUK9E3R2-40B,127 electronic component of NXP

Datasheet
Trans MOSFET N-CH 40V 222A Automotive 3-Pin(3+Tab) I2PAK Rail
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 5.2625 ea
Line Total: USD 36.84

0 - Global Stock
MOQ: 7  Multiples: 1
Pack Size: 1

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Additional Infomation About Product

BUK9E3R2-40B N-channel TrenchMOS logic level FET 13 March 2014 Product data sheet 1. General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 2. Features and benefits AEC Q101 compliant Low conduction losses due to low on-state resistance Suitable for logic level gate drive sources Suitable for thermally demanding environments due to 175 C rating 3. Applications 12 V loads Automotive systems General purpose power switching Motors, lamps and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current V = 5 V T = 25 C Fig. 3 Fig. 2 1 - - 100 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 300 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 2.4 2.8 m DSon GS D j resistance V = 5 V I = 25 A T = 25 C - 2.7 3.2 m GS D j Fig. 11 Fig. 12 Dynamic characteristics Q gate-drain charge V = 5 V I = 25 A V = 32 V - 37 - nC GD GS D DS T = 25 C Fig. 13 j Scan or click this QR code to view the latest information for this product I2P AKNXP Semiconductors BUK9E3R2-40B N-channel TrenchMOS logic level FET Symbol Parameter Conditions Min Typ Max Unit Avalanche ruugedness E non-repetitive drain- I = 100 A V 40 V R = 50 - - 1.2 J DS(AL)S D sup GS source avalanche V = 5 V T = 25 C unclamped GS j(init) energy 1 All individual parts of device must be 175 C to achieve maximum current rating. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9E3R2-40B I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 7. Marking Table 4. Marking codes Type number Marking code BUK9E3R2-40B BUK9E3R2-40B 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage R = 20 k - 40 V DGR GS BUK9E3R2-40B All information provided in this document is subject to legal disclaimers. NXP Semiconductors N.V. 2014. All rights reserved Product data sheet 13 March 2014 2 / 13

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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