Product Information

BUK9907-40ATC

BUK9907-40ATC electronic component of NXP

Datasheet
Trans MOSFET N-CH 40V 140A Automotive 5-Pin(5+Tab) TO-220
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

16: USD 2.1551 ea
Line Total: USD 34.48

0 - Global Stock
MOQ: 16  Multiples: 1
Pack Size: 1

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Packaging
Channel Mode
Gate-Source Voltage Max
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
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Additional Infomation About Product

BUK9907-40ATC N-channel TrenchPLUS logic level FET Rev. 02 16 February 2009 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS diodes for clamping, ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant 1.3 Applications 12 V and 24 V high power motor Electrical Power Assisted Steering drives (EPAS) Automotive and general purpose Protected drive for lamps power switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I drain current V =5V T =25C see Figure 3 see Figure 2 1 - - 140 A D GS mb P total power dissipation T = 25 C see Figure 1 - - 272 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =5V I =50A T =25C see Figure 7 -5.8 7 m DSon GS D j resistance see Figure 8 V =4.5 V I =50A T =25C - 6 7.7 m GS D j V =10V I =50A T =25C - 5.2 6.2 m GS D j S temperature sense I = 250 A T >-55 C T < 175 C 1.4 1.54 1.68 mV/K F(TSD) F j j diode temperature coefficient V temperature sense 648 658 668 mV F(TSD) diode forward voltage 1 Current is limited by power dissipation chip rating.NXP Semiconductors BUK9907-40ATC N-channel TrenchPLUS logic level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate da mb 2 A anode 3D drain 4 K cathode g 5S source mb D mounting base connected to MBL306 sk drain 13245 SOT263B (TO-220) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK9907-40ATC TO-220 plastic single-ended package heatsink mounted 1 mounting hole 5-lead SOT263B TO-220 BUK9907-40ATC 2 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 02 16 February 2009 2 of 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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