Product Information

BUK7C10-75AITE,118

BUK7C10-75AITE,118 electronic component of NXP

Datasheet
Trans MOSFET N-CH 75V 75A Automotive 7-Pin(6+Tab) D2PAK T/R

Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

7: USD 4.9283 ea
Line Total: USD 34.5

0 - Global Stock
MOQ: 7  Multiples: 1
Pack Size: 1
     
Manufacturer
Product Category
Packaging
Channel Mode
Continuous Drain Current
Gate Source Voltage Max
Power Dissipation
Mounting
Drain Source On Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain Source On Volt
Rad Hardened
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BUK7C10-75AITE N-channel TrenchPLUS standard level FET Rev. 03 17 February 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. The devices include TrenchPLUS current sensing and diodes for ElectroStatic Discharge (ESD) protection and temperature sensing. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Allows responsive temperature Low conduction losses due to low monitoring due to integrated on-state resistance temperature sensor Q101 compliant Electrostatically robust due to Reduced component count due to integrated protection diodes integrated current sensor 1.3 Applications Automotive and general purpose Electrical Power Assisted Steering power switching (EPAS) Fan control Variable Valve Timing for engines 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 75 V DS j j I drain current V =10V T =25C see Figure 2 1 -- 114 A D GS mb see Figure 3 Static characteristics R drain-source on-state V =10V I =50A T =25C see -8.8 10 m DSon GS D j resistance Figure 7 see Figure 8 I /I ratio of drain current to T >-55 C T < 175 C V > 10 V 450 500 550 D sense j j GS sense current S temperature sense diode I = 250 A T >-55 C T < 175 C -1.4 -1.54 -1.68 mV/K F(TSD) F j j temperature coefficient V temperature sense diode I = 250 A T = 25 C 648 658 668 mV F(TSD) F j forward voltage 1 Current is limited by power dissipation chip rating.Nexperia BUK7C10-75AITE N-channel TrenchPLUS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate d a mb 2 ISENSE sense current 3 A anode 4D drain g 5 K cathode 4 6 KS Kelvin source 1 2 3 5 6 7 s k 7S source SOT427 I MBL362 sense Kelvin source (D2PAK) mb D mounting base connected to drain 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7C10-75AITE D2PAK plastic single-ended surface-mounted package (D2PAK) 7 leads SOT427 (one lead cropped) Nexperia B.V. 2017. All rights reserved BUK7C10-75AITE 3 Product data sheet Rev. 03 17 February 2009 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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