Product Information

BT151X-500C,127

BT151X-500C,127 electronic component of NXP

Datasheet
SCRs RAIL-THYR AND TRIACS
Manufacturer: NXP
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.0876 ea
Line Total: USD 1.09

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 6000
Multiples : 6000
6000 : USD 0.2841
10000 : USD 0.2841
25000 : USD 0.2749

Read More Specifications

     
Manufacturer
Product Category
Rated Repetitive Off-State Voltage VDRM
On-State RMS Current - It RMS
Forward Voltage Drop
Maximum Gate Peak Inverse Voltage
Gate Trigger Voltage - Vgt
Gate Trigger Current - Igt
Holding Current Ih Max
Mounting Style
Package / Case
Packaging
Maximum Operating Temperature
Off State Leakage Current Vdrm Idrm
Package Case
Rated Repetitive Off State Voltage Vdrm
Brand
Gate Trigger Current Igt
Gate Trigger Voltage Vgt
Non Repetitive On State Current
Factory Pack Quantity :
Rohs Mouser
Current Rating
Off-State Leakage Current Vdrm Idrm
Type
Cnhts
Hts Code
Non Repetitive On-State Current
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

BT151X-500C SCR 5 September 2018 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F)full pac plastic package intended for use in applications requiring good bidirectional blocking voltage capability and high thermal cycling performance. 2. Features and benefits Good bidirectional blocking voltage capability High thermal cycling performance Isolated mounting base package Planar passivated for voltage ruggedness and reliability 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V repetitive peak reverse - - 500 V RRM voltage I average on-state half sine wave T 69 C - - 7.5 A T(AV) h current I RMS on-state current half sine wave T 69 C Fig. 1 - - 12 A T(RMS) h Fig. 2 Fig. 3 I non-repetitive peak on- half sine wave T = 25 C - - 100 A TSM j(init) state current t = 10 ms Fig. 4 Fig. 5 p half sine wave T = 25 C - - 110 A j(init) t = 8.3 ms p T junction temperature - - 125 C j Static characteristics I gate trigger current V = 12 V I = 0.1 A T = 25 C Fig. 7 - 2 15 mA GT D T j Dynamic characteristicsWeEn Semiconductors BT151X-500C SCR Symbol Parameter Conditions Min Typ Max Unit dV /dt rate of rise of off-state V = 335 V T = 125 C R = 100 200 1000 - V/s D DM j GK voltage (V = 67% of V ) exponential DM DRM waveform Fig. 12 V = 335 V T = 125 C (V = 67% 50 130 - V/s DM j DM of V ) exponential waveform gate DRM open circuit Fig. 12 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 K cathode mb A K G 2 A anode sym037 3 G gate mb n.c. mounting base isolated 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version BT151X-500C TO-220F plastic single-ended package isolated heatsink mounted 1 SOT186A mounting hole 3-lead TO-220full pac BT151X-500C All information provided in this document is subject to legal disclaimers. WeEn Semiconductors Co., Ltd. 2018. All rights reserved Product data sheet 5 September 2018 2 / 12

HS Compliance

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices

NXP may also be referenced as

FR9
Freescale
FREESCALE SEMI
Freescale Semicon
FREESCALE SEMICONDUC
Freescale Semiconductor
Freescale Semiconductor - NXP
NXP
NXP Freescale
NXP (FREESCALE)
NXP / Freescale
NXP SEMI
NXP Semicon
NXP SEMICONDUCTOR
NXP Semiconductors
NXP USA Inc.
PH3
PHI

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